公开(公告)号：US20200312818A1

公开(公告)日：2020-10-01

申请号：US16823402

申请日：2020-03-19

Applicant: DENSO CORPORATION

Inventor： Tomohito IWASHIGE ,  Takeshi ENDO ,  Kazuhiko SUGIURA

IPC: H01L25/07 ,  H01L23/00 ,  H01L23/367 ,  H01L21/48 ,  H01L25/00

Abstract: In a semiconductor device, a first semiconductor chip and a second semiconductor chip are disposed between a first support member and a second support member. A first underlayer bonding material is disposed between the first semiconductor chip and the first support member. A second underlayer bonding material is disposed between the second semiconductor chip and the first support member. A first upper layer bonding material is disposed between the first semiconductor chip and the second support member. A second upper layer bonding material is disposed between the second semiconductor chip and the second support member.

公开(公告)号：US20190198441A1

公开(公告)日：2019-06-27

申请号：US16284503

申请日：2019-02-25

Applicant: DENSO CORPORATION ,  C. Uyemura & Co., Ltd.

Inventor： Tomohito IWASHIGE ,  Kazuhiko SUGIURA ,  Kazuhiro MIWA ,  Yuichi SAKUMA ,  Seigo KUROSAKA ,  Yukinori ODA

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31

Abstract: A semiconductor device includes: a semiconductor element; a support as a metallic member that includes a metallized layer having a first component as an iron group element and a second component as a periodic table group five or group six transition metal element other than chromium provided at an outermost surface of the support, and is arranged such that the outermost surface faces the semiconductor element; a joint material that is arranged between the outermost surface of the support and the semiconductor element, and is joined with the outermost surface to fix the semiconductor element to the support; and a molding resin that is arranged to cover a joint body having the support, the joint material and the semiconductor element.

公开(公告)号：US20160204046A1

公开(公告)日：2016-07-14

申请号：US14913712

申请日：2014-08-21

Applicant: DENSO CORPORATION

Inventor： Tomohito IWASHIGE

IPC: H01L23/31 ,  H01L29/78 ,  H01L23/29 ,  H01L29/872 ,  H01L23/495 ,  H01L29/16 ,  H01L29/739

CPC classification number: H01L23/3142 ,  H01L23/29 ,  H01L23/293 ,  H01L23/31 ,  H01L23/3107 ,  H01L23/49562 ,  H01L23/49568 ,  H01L24/33 ,  H01L24/73 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/872 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/12032 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A semiconductor device includes a semiconductor chip, a resin mold portion sealing a component in which the semiconductor chip is included, and a bonding layer disposed between the resin mold portion and the component. The bonding layer is made of an organic resin that is disposed at an obverse side of the component, and includes a first layer bonded to the component and a second layer bonded to the resin mold portion. A loss coefficient tanδ of the first layer is smaller than a loss coefficient tans of the second layer within a temperature range of 200° C. to 250° C.

Abstract translation: 半导体器件包括半导体芯片，密封其中包含半导体芯片的部件的树脂模制部分和设置在树脂模具部分和部件之间的粘合层。 接合层由设置在该部件的正面的有机树脂制成，并且包括与该部件接合的第一层和与树脂模具部分接合的第二层。 在200℃至250℃的温度范围内，第一层的损耗系数tanδ小于第二层的损耗系数tanδ。

公开(公告)号：US20240297095A1

公开(公告)日：2024-09-05

申请号：US18418559

申请日：2024-01-22

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation ,  Taiyo Wire Cloth Co., Ltd. ,  Shikoku Instrumentation CO., LTD. ,  Monatec Co., Ltd.

Inventor： Shinya ITO ,  Tomohito IWASHIGE ,  Masayuki KAMIYA ,  Hiroki YOKOYAMA

IPC: H01L23/427

CPC classification number: H01L23/427

Abstract: A heat transport device includes a housing, a wick, and a vapor passage. The housing has a sealed space in which a working fluid is sealed. The wick forms a capillary passage through which a liquid-phase working fluid flows inside the housing. A gas-phase working fluid flows through the vapor passage inside the housing. An outer wall of the housing has a heating element disposing portion on which a heating element is disposed, and a non-disposing portion on which a heating element is not disposed. An internal portion of the housing has a heat receiving portion overlapping with the heating element disposing portion in a thickness direction of the housing and a heat radiating portion overlapping with the non-disposing portion in the thickness direction. Both the wick and the vapor passage are provided to extend over the heat receiving portion and the heat radiating portion.

公开(公告)号：US20190109067A1

公开(公告)日：2019-04-11

申请号：US16216044

申请日：2018-12-11

Applicant: DENSO CORPORATION

Inventor： Kazuhiko SUGIURA ,  Tomohito IWASHIGE ,  Jun KAWAI

IPC: H01L23/373 ,  H01L29/739 ,  H01L23/62 ,  H01L23/00

Abstract: A semiconductor device includes a semiconductor chip having an electrode portion and a joining member electrically connected to the electrode portion to allow an electric current to flow in the semiconductor chip through the joining member. The joining member contains a protective material that has a positive temperature coefficient of resistivity, and the positive temperature coefficient of resistivity has a larger value in a temperature range higher than a threshold temperature than in a temperature range lower than the threshold temperature, the threshold temperature being a predetermined temperature lower than a breakdown temperature of the semiconductor chip. The electrode portion of the semiconductor chip may contain the protective material.

公开(公告)号：US20220359229A1

公开(公告)日：2022-11-10

申请号：US17872142

申请日：2022-07-25

Applicant: DENSO CORPORATION

Inventor： Tomohito IWASHIGE ,  Takeshi ENDO

IPC: H01L21/52 ,  H01L23/04

Abstract: Joining a second supporting member to one surface of a semiconductor chip through an upper layer joining portion includes: forming, on the one surface, a pre-joining layer by pressure-sintering a first constituent member containing a sintering material on the one surface such that spaces between the plurality of protrusions are filled with the pre-joining layer and the pre-joining layer has a flat surface on a side of the pre-joining layer away from the semiconductor chip; arranging, on the flat surface, the second supporting member through a second constituent member containing a sintering material; and heating and pressurizing the second constituent member. Thereby, an upper layer joining portion is formed by the second constituent member and the pre-joining layer.

公开(公告)号：US20190214360A1

公开(公告)日：2019-07-11

申请号：US16353525

申请日：2019-03-14

Applicant: DENSO CORPORATION

Inventor： Kazuhiko SUGIURA ,  Tomohito IWASHIGE ,  Jun KAWAI

IPC: H01L23/00 ,  H01L23/367

Abstract: A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.