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公开(公告)号:US20240227100A1
公开(公告)日:2024-07-11
申请号:US18405135
申请日:2024-01-05
Applicant: DISCO CORPORATION
Inventor: Naoki OMIYA , Kazuki MORI
IPC: B23Q3/08
CPC classification number: B23Q3/084
Abstract: A jig for use in manufacturing a wafer from an ingot and for being delivered while being integrated with the ingot includes a base having a holding mechanism for holding the ingot such that the ingot protrudes therefrom and an information recording member fixed to the base for recording individual information of the ingot identifiably therein. Preferably, the base has a disk-shaped recess defined therein that has a predetermined depth for accommodating a bottom portion of the ingot therein.
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公开(公告)号:US20240181562A1
公开(公告)日:2024-06-06
申请号:US18526079
申请日:2023-12-01
Applicant: DISCO CORPORATION
Inventor: Kazuki MORI
IPC: B23K26/06 , B23K26/0622 , B23K26/067
CPC classification number: B23K26/0665 , B23K26/0622 , B23K26/0643 , B23K26/0648 , B23K26/067
Abstract: A laser processing apparatus has a laser beam applying unit including a laser oscillator for emitting a laser beam, an attenuator for regulating output power of the laser beam, a beam condenser for converging the laser beam and applying the converged laser beam to a workpiece held on a chuck table, a plane-of-polarization rotating unit disposed between the attenuator and the beam condenser for rotating the plane of polarization of the laser beam, a beam splitter disposed between the plane-of-polarization rotating unit and the attenuator for branching a returning beam reflected from an upper surface of the workpiece, an observing unit for observing the returning beam branched by the beam splitter, and an adjusting unit for adjusting the position of the beam condenser in order to focus a spot of the laser beam on the upper surface of the workpiece according to a configuration of the returning beam.
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公开(公告)号:US20240399509A1
公开(公告)日:2024-12-05
申请号:US18671087
申请日:2024-05-22
Applicant: DISCO CORPORATION
Inventor: Kazuki MORI
IPC: B23K26/53 , B23K26/06 , B23K26/073 , B23K26/38 , B23K101/40
Abstract: A method of manufacturing a wafer includes a peel-off layer forming step of forming a plurality of peel-off layers in a workpiece by, while a focused spot of a pulsed laser beam having a wavelength transmittable through the workpiece is positioned at a predetermined depth in the workpiece, alternately repeating processing-feeding for moving the workpiece and the focused spot of the laser beam relative to each other along a first direction and indexing-feeding for moving the workpiece and a condensing lens relative to each other along a second direction wherein the first and second directions are perpendicular to thicknesswise directions of the workpiece, a crack developing step of applying the laser beam to the modified layer of at least one of the peel-off layers formed in the peel-off layer forming step, and a peeling step of peeling off a wafer from the workpiece at the peel-off layers.
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公开(公告)号:US20220268700A1
公开(公告)日:2022-08-25
申请号:US17649714
申请日:2022-02-02
Applicant: DISCO CORPORATION
Inventor: Kazuki MORI , Ryohei YAMAMOTO
IPC: G01N21/64
Abstract: A detecting apparatus for use in specifying regions having different impurity concentrations in an ingot includes an ingot holding unit having a holding surface for holding the ingot thereon, an excitation light source for applying excitation light having a predetermined wavelength to a face side of the ingot held on the holding surface, and a photodetector for detecting fluorescence emitted from the ingot upon exposure to the excitation light and generating an electric signal representing a number of photons of only light whose wavelength is in an infrared radiation range, of the detected fluorescence.
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公开(公告)号:US20220266393A1
公开(公告)日:2022-08-25
申请号:US17649846
申请日:2022-02-03
Applicant: DISCO CORPORATION
Inventor: Kazuki MORI , Kazuya HIRATA
Abstract: Irradiation conditions for a laser beam to respective ones of a plurality of regions included in the upper surface of an ingot are set according to the numbers of photons of fluorescence occurring when excitation light is irradiated to the respective regions. Here, it is to be understood that the number of the photons of the fluorescence occurring from a region of an ingot depends on the concentration of an impurity doped in the ingot. A separation layer can therefore be formed at a uniform depth from the upper surface of the ingot even if regions of different impurity concentrations are included in the ingot. It is hence possible to reduce a
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