公开(公告)号：US20070121391A1

公开(公告)日：2007-05-31

申请号：US11288494

申请日：2005-11-29

申请人： Dietmar Gogl ,  Daniel Braun

发明人： Dietmar Gogl ,  Daniel Braun

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C8/10

摘要： A magnetic memory is disclosed. In one embodiment, the magnetic memory array includes a plurality of cell columns and a pair of reference cell columns, including a first reference cell column and a second reference cell column. A comparator is provided with a first and a second input terminal. A switching circuit is configured to connect each of the cell columns to the first input terminal and the pair of reference cell columns coupled in parallel to the second input terminal, and configured to connect the first reference cell column to the first input terminal and the second reference cell column to the second input terminal.

摘要翻译： 公开了磁存储器。 在一个实施例中，磁存储阵列包括多个单元列和一对参考单元列，包括第一参考单元列和第二参考单元列。 比较器具有第一和第二输入端。 开关电路被配置为将每个单元列连接到与第二输入端并联耦合的第一输入端和一对参考单元列，并且被配置为将第一参考单元列连接到第一输入端，而第二参考单元列 参考单元格列到第二个输入端。

公开(公告)号：US07200033B2

公开(公告)日：2007-04-03

申请号：US10998808

申请日：2004-11-30

申请人： Daniel Braun ,  Dietmar Gogl

发明人： Daniel Braun ,  Dietmar Gogl

IPC分类号： G11C11/00 ,  G11C5/06 ,  G11C11/14 ,  G11C11/15 ,  G11C7/02

CPC分类号： H01L27/222 ,  G11C11/16

摘要： An MRAM memory chip includes a plurality of magnetoresistive memory cells each including a magnetic tunnel junction having first (fixed) and second (free) magnetic regions, where the second magnetic region includes at least two ferromagnetic layers that are antiferromagnetically coupled, wherein a coil surrounds the memory chip for creating a magnetic offset field. Further, a method of writing to an MRAM chip includes bringing the memory cells into an active state exhibiting a reduced switching field before writing thereto and bringing the memory cells into a passive state exhibiting enlarged switching field after writing thereto.

摘要翻译： MRAM存储器芯片包括多个磁阻存储单元，每个磁阻存储单元包括具有第一（固定）和第二（自由）磁区的磁性隧道结，其中第二磁区包括反铁磁耦合的至少两个铁磁层，其中线圈围绕 用于产生磁偏移场的存储芯片。 此外，写入MRAM芯片的方法包括在写入之前使存储单元进入呈现减小的开关场的有效状态，并且在写入之后使存储单元成为展现放大开关场的被动状态。

公开(公告)号：US20060239056A1

公开(公告)日：2006-10-26

申请号：US11112851

申请日：2005-04-22

申请人： Dietmar Gogl ,  Hans-Heinrich Viehmann ,  Daniel Braun

发明人： Dietmar Gogl ,  Hans-Heinrich Viehmann ,  Daniel Braun

IPC分类号： G11C5/00

CPC分类号： G11C11/15

摘要： An apparatus comprising a magnetoresistive random access memory (MRAM) and a method of forming the same. The apparatus includes a memory circuit comprising an MRAM cell, and a charge pump circuit electrically coupled to the memory circuit wherein the memory circuit and at least a first portion of the charge pump circuit are fabricated on a single semiconductor chip. The charge pump circuit further includes a second portion comprising at least one capacitor external to the semiconductor chip. The second portion of the charge pump circuit may be packaged in a chip package or external to the chip package.

摘要翻译： 一种包括磁阻随机存取存储器（MRAM）的装置及其形成方法。 该装置包括存储电路，该存储电路包括MRAM单元和电耦合到存储电路的电荷泵电路，其中存储电路和电荷泵电路的至少第一部分制造在单个半导体芯片上。 电荷泵电路还包括在半导体芯片外部包括至少一个电容器的第二部分。 电荷泵电路的第二部分可以封装在芯片封装中或芯片封装的外部。

公开(公告)号：US20060289970A1

公开(公告)日：2006-12-28

申请号：US11168203

申请日：2005-06-28

申请人： Dietmar Gogl ,  Daniel Braun

发明人： Dietmar Gogl ,  Daniel Braun

IPC分类号： H01L23/552

CPC分类号： H01L23/552 ,  G11C11/15 ,  H01L23/29 ,  H01L2224/16 ,  H01L2924/3025

摘要： An apparatus comprising a magnetically shielded MRAM chip and a method of manufacturing the same. The apparatus includes an MRAM module and a protective cover. The MRAM module includes a circuit board and a memory chip attached to the circuit board, the memory chip containing magnetoresistive random access memory (MRAM) cells. The protective cover includes a magnetic shielding material and at least partially encloses the memory chip. In another embodiment, the protective cover shields the memory chip without shielding at least a portion of the circuit board.

摘要翻译： 一种包括磁屏蔽MRAM芯片的装置及其制造方法。 该装置包括MRAM模块和保护盖。 MRAM模块包括电路板和连接到电路板的存储器芯片，该存储器芯片包含磁阻随机存取存储器（MRAM）单元。 保护盖包括磁屏蔽材料并且至少部分地包围存储芯片。 在另一个实施例中，保护盖屏蔽存储芯片，而不屏蔽电路板的至少一部分。

公开(公告)号：US20060114713A1

公开(公告)日：2006-06-01

申请号：US10998808

申请日：2004-11-30

申请人： Daniel Braun ,  Dietmar Gogl

发明人： Daniel Braun ,  Dietmar Gogl

IPC分类号： G11C11/00

CPC分类号： H01L27/222 ,  G11C11/16

摘要： An MRAM memory chip includes a plurality of magnetoresistive memory cells each including a magnetic tunnel junction having first (fixed) and second (free) magnetic regions, where the second magnetic region includes at least two ferromagnetic layers that are antiferromagnetically coupled, wherein a coil surrounds the memory chip for creating a magnetic offset field. Further, a method of writing to an MRAM chip includes bringing the memory cells into an active state exhibiting a reduced switching field before writing thereto and bringing the memory cells into a passive state exhibiting enlarged switching field after writing thereto.

摘要翻译： MRAM存储器芯片包括多个磁阻存储单元，每个磁阻存储单元包括具有第一（固定）和第二（自由）磁区的磁性隧道结，其中第二磁区包括反铁磁耦合的至少两个铁磁层，其中线圈围绕 用于产生磁偏移场的存储芯片。 此外，写入MRAM芯片的方法包括在写入之前使存储单元进入呈现减小的开关场的有效状态，并且在写入之后使存储单元成为展现放大开关场的被动状态。

公开(公告)号：US07313043B2

公开(公告)日：2007-12-25

申请号：US11288494

申请日：2005-11-29

申请人： Dietmar Gogl ,  Daniel Braun

发明人： Dietmar Gogl ,  Daniel Braun

IPC分类号： G11C7/02 ,  G11C5/08 ,  G11C11/00 ,  G11C11/14 ,  G11C11/15

CPC分类号： G11C11/16 ,  G11C8/10

摘要： A magnetic memory is disclosed. In one embodiment, the magnetic memory array includes a plurality of cell columns and a pair of reference cell columns, including a first reference cell column and a second reference cell column. A comparator is provided with a first and a second input terminal. A switching circuit is configured to connect each of the cell columns to the first input terminal and the pair of reference cell columns coupled in parallel to the second input terminal, and configured to connect the first reference cell column to the first input terminal and the second reference cell column to the second input terminal.

摘要翻译： 公开了磁存储器。 在一个实施例中，磁存储阵列包括多个单元列和一对参考单元列，包括第一参考单元列和第二参考单元列。 比较器具有第一和第二输入端。 开关电路被配置为将每个单元列连接到与第二输入端并联耦合的第一输入端和一对参考单元列，并且被配置为将第一参考单元列连接到第一输入端，而第二参考单元列 参考单元格列到第二个输入端。

公开(公告)号：US20100274746A1

公开(公告)日：2010-10-28

申请号：US12665992

申请日：2008-06-23

申请人： Jörn Rickert ,  Carsten Mehring ,  Julie Blumberg ,  Daniel Braun ,  Tomislav Milekovic ,  Jörg Fischer

发明人： Jörn Rickert ,  Carsten Mehring ,  Julie Blumberg ,  Daniel Braun ,  Tomislav Milekovic ,  Jörg Fischer

IPC分类号： G06F15/18 ,  G06N5/02 ,  A61F2/48

CPC分类号： G06N3/02 ,  G06K9/00536 ,  G06K9/6278

摘要： Method and device for computer-aided prediction of intended movements from neuronal signals of a brain, wherein the neuronal signals are each associated in the brain with intended movements, wherein neuronal signals are recorded and the most probable movements are determined from these, specifically using a predetermined model in which a recorded neuronal signal and a determined movement are assigned to each other, and, for the probability with which a recorded neuronal signal corresponds to a respective predetermined movement, a predetermined distribution is assumed that is defined by specific characteristic values, wherein an adaptation of the neuronal signal is included in the predetermined model.

摘要翻译： 用于计算机辅助预测来自脑的神经元信号的预期运动的方法和装置，其中神经元信号各自与大脑中的预期运动相关联，其中记录神经元信号，并且从这些运动中确定最可能的运动，具体地使用 其中记录的神经元信号和确定的运动彼此分配的预定模型，并且对于记录的神经元信号对应于相应的预定移动的概率，假设由特定特征值定义的预定分布，其中 神经元信号的适应性包括在预定模型中。

公开(公告)号：US07057253B2

公开(公告)日：2006-06-06

申请号：US10465144

申请日：2003-06-19

申请人： Daniel Braun

发明人： Daniel Braun

IPC分类号： H01L31/107

CPC分类号： G11C11/16

摘要： A magnetic memory cell and method of manufacturing thereof, wherein the angle between the shape anisotropy axis and the intrinsic anisotropy axis of the magnetic material layer is optimized to minimize fluctuations in the switching field. The angle between shape anisotropy axis and intrinsic anisotropy axis is preferably between 45 and less than 90 degrees. Magnetic layers may be used having increased thickness, resulting in increased activation energy. Magnetic memory cells may be manufactured that are more stable for long term storage and have improved write margins.

摘要翻译： 一种磁存储单元及其制造方法，其中，使形状各向异性轴与磁性材料层的固有各向异性轴之间的角度最优化以最小化开关场的波动。 形状各向异性轴与本征各向异性轴之间的角度优选为45度以上且小于90度。 可以使用具有增加的厚度的磁性层，导致增加的活化能。 可以制造对于长期存储更稳定并具有改善的写入裕度的磁存储器单元。

公开(公告)号：US20060114712A1

公开(公告)日：2006-06-01

申请号：US10998807

申请日：2004-11-30

申请人： Daniel Braun

发明人： Daniel Braun

IPC分类号： G11C11/00

CPC分类号： G11C11/15

摘要： A magnetoresistive memory cell includes a magnetic tunnel junction including first (fixed) and second (free) magnetic regions, where the second magnetic region includes at least two ferromagnetic layers being antiferromagnetically coupled. The magnetoresistive memory cell further includes a switchable ferromagnetic offset field layer being provided with a free magnetic moment vector that is freely switchable between the same and opposite directions with respect to the fixed magnetic moment vector of the first magnetic region. A method of switching a magnetoresistive memory cell includes adiabatic rotational switching, where the memory cell is brought in an active state exhibiting reduced switching fields before its switching and is brought in a passive state exhibiting enlarged switching fields after its switching.

摘要翻译： 磁阻存储单元包括包括第一（固定）和第二（自由）磁区的磁隧道结，其中第二磁区包括至少两个铁磁层，以反铁磁耦合。 磁阻存储单元还包括可切换铁磁偏移场层，其具有相对于第一磁区的固定磁矩矢量在相同方向和相反方向之间自由切换的自由磁矩矢量。 切换磁阻存储单元的方法包括绝热旋转切换，其中存储单元在其切换之前呈现出减小的开关场的有效状态，并且在其切换之后呈现出展现出扩大的开关场的被动状态。

公开(公告)号：US20060092689A1

公开(公告)日：2006-05-04

申请号：US10982026

申请日：2004-11-04

申请人： Daniel Braun ,  Ulrich Klostermann

发明人： Daniel Braun ,  Ulrich Klostermann

IPC分类号： G11C11/00

CPC分类号： G11C11/16 ,  G11C7/067 ,  G11C7/14 ,  G11C29/028 ,  G11C29/50 ,  G11C29/50008 ,  G11C2207/063

摘要： A reference current source for a magnetic memory device is preferably configured with magnetic tunnel junction cells and includes more than four reference magnetic memory cells to improve reliability of the magnetic memory device and to reduce sensitivity at a device level to individual cell failures. The reference current source includes a large number of magnetic memory cells coupled in an array, and a current source provides a reference current dependent on the array resistance. In another embodiment a large number of magnetic memory cells are coupled to current sources that are summed and scaled to produce a reference current source. A current comparator senses the unknown state of a magnetic memory cell. In a further embodiment, an array of magnetic memory cells is configured to provide a non-volatile, adjustable resistance. In a further embodiment, the array of magnetic memory cells is configured with a tap to provide a non-volatile, adjustable potentiometer.

摘要翻译： 用于磁存储器件的参考电流源优选地配置有磁性隧道结单元并且包括多于四个的参考磁存储器单元，以提高磁存储器件的可靠性并且降低器件级别对各个单元故障的灵敏度。 参考电流源包括以阵列耦合的大量磁存储器单元，电流源提供取决于阵列电阻的参考电流。 在另一个实施例中，大量的磁存储器单元被耦合到电流源，其被相加和缩放以产生参考电流源。 电流比较器检测磁存储单元的未知状态。 在另一个实施例中，磁存储器单元的阵列被配置成提供非易失性可调电阻。 在另一实施例中，磁存储单元的阵列配置有抽头以提供非易失性可调节的电位计。