公开(公告)号：US20230399754A1

公开(公告)日：2023-12-14

申请号：US18207569

申请日：2023-06-08

Applicant: ENTEGRIS, INC.

Inventor： Daniela White ,  Michael L. White ,  YoungMin Kim ,  Akshay Rajopadhye ,  Atanu K. Das

IPC: C23G1/18 ,  B81C1/00

CPC classification number: C23G1/18 ,  B81C1/00857 ,  B81C2201/0142 ,  B81C2201/0133

Abstract: The present disclosure relates to removal compositions for at least partially removing post-chemical mechanical polishing (post-CMP) residues from the surface of a microelectronic device. The removal compositions comprise an aqueous base composition and various molybdenum etching inhibitors that reduce the amount of molybdenum removed from the surface of the microelectronic device compared to the aqueous base composition.

公开(公告)号：US20230002641A1

公开(公告)日：2023-01-05

申请号：US17846929

申请日：2022-06-22

Applicant: ENTEGRIS, INC.

Inventor： Rajiv K. Singh ,  Sunny De ,  Akshay Rajopadhye ,  Aditya D. Verma

IPC: C09G1/02 ,  H01L21/321

Abstract: The invention provides compositions useful in the polishing of transition metal-containing surfaces typically found on microelectronic devices. In one aspect, the invention provides a composition comprising: a liquid carrier; titania abrasive particles, wherein the particles are at least partially coated with alumina or amorphous silica to provide coated titania abrasive particles; wherein the coated titania abrasive particles have an average diameter of about 50 nm to about 250 nm; and a corrosion inhibitor. The invention, the compositions are advantageously utilized to polish microelectronic device substrates having transition metal-containing surfaces thereon. In certain embodiments, the surfaces are chosen from molybdenum and ruthenium-containing films and show markedly improved selectivity relative to thermal oxide.