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公开(公告)号：US20230127390A1
公开(公告)日：2023-04-27
申请号：US17970371
申请日：2022-10-20
申请人： ENTEGRIS, INC.
发明人： Rajiv K. Singh , Sunny De
摘要： The invention provides methodology for final finishing of hard surfaces such as diamond surfaces. In this method, a smooth pad having a surface roughness of about 0.2 nm to about 100 nm, having, for example a thickness ranging from about 0.02 mm to about 5 mm, and a Shore D hardness of 30 or higher, is utilized in conjunction with known polishing slurries to provide diamond surfaces having superior smooth finishes.
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公开(公告)号：US20230002641A1
公开(公告)日：2023-01-05
申请号：US17846929
申请日：2022-06-22
申请人： ENTEGRIS, INC.
发明人： Rajiv K. Singh , Sunny De , Akshay Rajopadhye , Aditya D. Verma
IPC分类号： C09G1/02 , H01L21/321
摘要： The invention provides compositions useful in the polishing of transition metal-containing surfaces typically found on microelectronic devices. In one aspect, the invention provides a composition comprising: a liquid carrier; titania abrasive particles, wherein the particles are at least partially coated with alumina or amorphous silica to provide coated titania abrasive particles; wherein the coated titania abrasive particles have an average diameter of about 50 nm to about 250 nm; and a corrosion inhibitor. The invention, the compositions are advantageously utilized to polish microelectronic device substrates having transition metal-containing surfaces thereon. In certain embodiments, the surfaces are chosen from molybdenum and ruthenium-containing films and show markedly improved selectivity relative to thermal oxide.
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公开(公告)号：US20220396715A1
公开(公告)日：2022-12-15
申请号：US17840448
申请日：2022-06-14
申请人： ENTEGRIS, INC.
发明人： Rajiv K. Singh , Sunny De
摘要： The invention provides improved slurries for the polishing of hard materials such as those having a Mohs hardness of greater than about 6. Exemplary hard surfaces include sapphire, silicon carbide, silicon nitride, and gallium nitride, and diamond. In the compositions and method of the invention, novel compositions comprising a unique combination of additives which surprisingly were found to uniformly disperse diamond particles having a wide range of particle size in a slurry. In the method of the invention, the generally alkaline slurry compositions of the invention are capable of utilizing diamond particle sizes of greater than 40 microns while effecting good removal rates. In such cases, when utilized with a suitable pad, rapid and planar grinding of silicon carbide, silicon nitride, sapphire, gallium nitride, and diamond is possible, with uniform surface damage.
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