公开(公告)号：US20250136631A1

公开(公告)日：2025-05-01

申请号：US18930895

申请日：2024-10-29

Applicant: ENTEGRIS, INC.

Inventor： Drew Michael Hood

IPC: C07F17/02 ,  B01D11/04 ,  B01D37/00

Abstract: Methods for purifying bis (arene) nickel complex products and related products are provided. A method comprises obtaining a crude mixture comprising a bis (arene) nickel complex and at least one impurity; obtaining a separation solvent; distilling the separation solvent to generate a distilled separation solvent; filtering the crude mixture with the distilled separation solvent so as to obtain a filtrate comprising the distilled separation solvent and at least a portion of the bis (arene) nickel complex; and removing the separation solvent from the filtrate so as to obtain a purified bis (arene) nickel complex product.

公开(公告)号：US20250109502A1

公开(公告)日：2025-04-03

申请号：US18900619

申请日：2024-09-27

Applicant: ENTEGRIS, INC.

Inventor： Drew Michael Hood

IPC: C23F11/12

Abstract: Methods for selective passivation for metals and related systems and related methods are provided. A method comprises one or more of the following steps: exposing a substrate to an inhibitor compound to form a first layer on a metal surface of the substrate, wherein the inhibitor compound comprises an alkyne compound functionalized with at least one alkoxy group; and exposing the substrate to a precursor vapor to form a second layer on a non-metal surface of the substrate. Other methods and systems are provided herein.

公开(公告)号：US20250136630A1

公开(公告)日：2025-05-01

申请号：US18930920

申请日：2024-10-29

Applicant: ENTEGRIS, INC.

Inventor： Drew Michael Hood

IPC: C07F15/04

Abstract: Methods for purifying bis (arene) nickel complex products and related products are provided. A method comprises obtaining a crude mixture comprising a bis (arene) nickel complex and at least one impurity, dissolving the crude mixture in a recrystallization solvent so as to obtain a saturated solution of the crude mixture, recrystallizing the bis (arene) nickel complex, and removing the recrystallization solvent so as to obtain a purified bis (arene) nickel complex product.

公开(公告)号：US20240101582A1

公开(公告)日：2024-03-28

申请号：US18239661

申请日：2023-08-29

Applicant: ENTEGRIS, INC.

Inventor： Drew Michael Hood ,  Thomas M. Cameron

IPC: C07F7/00

CPC classification number: C07F7/00

Abstract: The compounds of the present disclosure have been developed and synthesized to generate compounds that provide improvements in film applications, such as HfOx, ZrOx, and TiOx film applications. The improvements to the compounds of the present disclosure include increased molecule stability at delivery temperature and deposition temperature, improvements related to precursor film impurity levels, molecule volatility, molecule melting point, and step coverage.

公开(公告)号：US20250051372A1

公开(公告)日：2025-02-13

申请号：US18785117

申请日：2024-07-26

Applicant: ENTEGRIS, INC.

Inventor： Claudia Fafard ,  David M. Ermert ,  Drew Michael Hood

IPC: C07F7/22 ,  C07F7/08 ,  C07F7/28

Abstract: Methods are provided. A method comprises contacting a tin (IV) compound with a reagent to form at least one reaction product. The regent comprises at least one of a metal alkoxide compound, a metal amide compound, or any combination thereof. The at least one reaction product comprises at least one of a substituted tin (IV) amide compound, a substituted tin (IV) alkoxide compound, or any combination thereof. Various compositions and various compounds, among other things, are also provided.

公开(公告)号：US20250074927A1

公开(公告)日：2025-03-06

申请号：US18809639

申请日：2024-08-20

Applicant: ENTEGRIS, INC.

Inventor： Drew Michael Hood ,  Thomas M. Cameron ,  Bryan C. Hendrix

IPC: C07F7/02 ,  C07F7/18 ,  C23C16/40 ,  C23C16/455

Abstract: Precursors for selective deposition of silicon-containing films are provided. A precursor comprises a compound of the formula: R(HO)Si(OR1)(OR2), where: R is or comprises an alkyl, an alkenyl, or an alkoxy; and R1 and R2 are independently a hydrogen, an alkoxyl, or R1 and R2 are bonded to form a heterocycle. Devices comprising silicon-containing films are also provided, wherein the silicon-containing film comprises a reaction product of the precursor and another reactive species. Methods of depositing silicon-containing films are also provided, among other things.

公开(公告)号：US20240092816A1

公开(公告)日：2024-03-21

申请号：US18240873

申请日：2023-08-31

Applicant: ENTEGRIS, INC.

Inventor： Drew Michael Hood ,  Thomas M. Cameron

IPC: C07F17/00 ,  C07F7/00 ,  C07F7/28

CPC classification number: C07F17/00 ,  C07F7/003 ,  C07F7/28

Abstract: The present disclosure relates to the field of precursors, more specifically precursors containing at least one fluorinated group. In some embodiments, the precursors are hafnium, zirconium, and titanium bis(cyclopentadienyl) precursors containing fluorinated alkoxides and amides. In some embodiments, the present disclosure relates to using precursors for deposition of group 4 containing thin films, such as HfOx, ZrOx, and TiOx film applications. These thin films can be used in a variety of applications including semiconductor device structures. The compounds of the present disclosure have been developed and synthesized to generate compounds that provide improvements in film applications, such as HfOx, ZrOx, and TiOx film applications. The improvements to the compounds of the present disclosure include increased molecule stability at delivery temperature and deposition temperature, improvements related to precursor film impurity levels, molecule volatility, molecule melting point, and step coverage.