公开(公告)号：US20180323332A1

公开(公告)日：2018-11-08

申请号：US16040173

申请日：2018-07-19

Applicant: First Solar, Inc.

Inventor： John Barden ,  Changming Jin ,  Feng Liao ,  Rick C. Powell ,  Gang Xiong

IPC: H01L31/18 ,  C23C14/58 ,  C23C14/02 ,  H01L21/677 ,  H01L21/67 ,  C23C14/22 ,  C23C14/06

CPC classification number: H01L31/18 ,  C23C14/024 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/58 ,  H01L21/67173 ,  H01L21/6776 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: A vapor transport deposition system and method that includes a vaporizer and distributor unit and at least one auxiliary process unit for integrating thin-film layer deposition with one or more pre- or post-deposition processes.

公开(公告)号：US20130203202A1

公开(公告)日：2013-08-08

申请号：US13754535

申请日：2013-01-30

Applicant: FIRST SOLAR, INC.

Inventor： Gang Xiong ,  John Barden ,  Feng Liao ,  Rick C. Powell ,  Changming Jin

IPC: H01L31/18

CPC classification number: H01L31/18 ,  C23C14/024 ,  C23C14/0629 ,  C23C14/228 ,  C23C14/58 ,  H01L21/67173 ,  H01L21/6776 ,  H01L31/1828 ,  Y02E10/543 ,  Y02P70/521

Abstract: vapor transport deposition system and method that includes a vaporizer and distributor unit and at least one auxiliary process unit for integrating thin-film layer deposition with one or more pre- or post-deposition processes.

Abstract translation: 蒸气输送沉积系统和方法，其包括蒸发器和分配器单元以及用于将薄膜层沉积与一个或多个沉积前或沉积后工艺集成的至少一个辅助处理单元。

公开(公告)号：US20130180579A1

公开(公告)日：2013-07-18

申请号：US13743440

申请日：2013-01-17

Applicant: FIRST SOLAR, INC

Inventor： Changming Jin ,  Xilin Peng ,  Rick C. Powell ,  Aaron Roggelin ,  Gang Xiong

IPC: H01L31/075 ,  H01L31/18

CPC classification number: H01L31/075 ,  H01L31/073 ,  H01L31/1828 ,  Y02E10/543

Abstract: A photovoltaic device having an absorber multilayer and methods of manufacturing the same are described. The absorber multilayer, which is formed adjacent to a window layer, may include a doped first cadmium telluride layer which contains a first dopant and an intrinsic second cadmium telluride layer. The absorber multilayer may further include at least a third cadmium telluride layer formed adjacent to a back contact. The at least third cadmium telluride layer may include doped or intrinsic cadmium telluride.

Abstract translation: 描述了具有吸收体多层的光电器件及其制造方法。 与窗口层相邻形成的吸收体多层可以包括掺杂的第一碲化镉层，其含有第一掺杂剂和本征的第二碲化镉层。 吸收体多层可以进一步包括至少一个邻近背面接触形成的第三碲化镉层。 至少第三碲化镉层可以包括掺杂或固有的碲化镉。

公开(公告)号：US20220102567A1

公开(公告)日：2022-03-31

申请号：US17428725

申请日：2020-02-06

Applicant: First Solar, Inc.

Inventor： Changming Jin ,  Vijay Karthik Sankar

IPC: H01L31/05 ,  H01L31/073

Abstract: According to the embodiments provided herein, back contacts for photovoltaic devices can include one or more metal oxynitride layers.

公开(公告)号：US10896991B2

公开(公告)日：2021-01-19

申请号：US16522980

申请日：2019-07-26

Applicant: First Solar, Inc.

Inventor： Changming Jin ,  Sanghyun Lee ,  Jun-Ying Zhang

IPC: H01L31/073 ,  H01L31/18 ,  H01L31/0264 ,  H01L31/0272 ,  H01L21/02

Abstract: Disclosed are methods for the surface cleaning and passivation of PV absorbers, such as CdTe substrates usable in solar cells, and devices made by such methods. In some embodiments, the method involves an anode layer ion source (ALIS) plasma discharge process to clean and oxidize a CdTe surface to produce a thin oxide layer between the CdTe layer and subsequent back contact layer(s).

公开(公告)号：US10367110B2

公开(公告)日：2019-07-30

申请号：US15373228

申请日：2016-12-08

Applicant: First Solar, Inc.

Inventor： Changming Jin ,  Sanghyun Lee ,  Jun-Ying Zhang

IPC: H01L31/18 ,  H01L31/073 ,  H01L31/0264 ,  H01L31/0272 ,  H01L21/02

Abstract: Disclosed are methods for the surface cleaning and passivation of PV absorbers, such as CdTe substrates usable in solar cells, and devices made by such methods. In some embodiments, the method involves an anode layer ion source (ALIS) plasma discharge process to clean and oxidize a CdTe surface to produce a thin oxide layer between the CdTe layer and subsequent back contact layer(s).

公开(公告)号：US20170170353A1

公开(公告)日：2017-06-15

申请号：US15373228

申请日：2016-12-08

Applicant: First Solar, Inc.

Inventor： Changming Jin ,  Sanghyun Lee ,  Jun-Ying Zhang

IPC: H01L31/073 ,  H01L31/0272 ,  H01L31/0264

CPC classification number: H01L31/073 ,  H01J2237/335 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02551 ,  H01L21/02664 ,  H01L31/0264 ,  H01L31/0272 ,  H01L31/1868 ,  Y02E10/543 ,  Y02P70/521

Abstract: Disclosed are methods for the surface cleaning and passivation of PV absorbers, such as CdTe substrates usable in solar cells, and devices made by such methods. In some embodiments, the method involves an anode layer ion source (ALIS) plasma discharge process to clean and oxidize a CdTe surface to produce a thin oxide layer between the CdTe layer and subsequent back contact layer(s).