公开(公告)号：US09660641B2

公开(公告)日：2017-05-23

申请号：US15229312

申请日：2016-08-05

Applicant: Freescale Semiconductor, Inc.

Inventor： Bruce M. Green ,  Enver Krvavac ,  Joseph Staudinger

IPC: H03K17/16 ,  G06F1/32

CPC classification number: H03K17/165 ,  G06F1/3206 ,  H03K17/162

Abstract: An embodiment of a device includes a terminal, an active transistor die electrically coupled to the terminal, a detector configured to sense a signal characteristic on the terminal, and control circuitry electrically coupled to the active transistor die and to the detector, wherein the active transistor die, detector, and control circuitry are coupled to a package. The control circuitry may include a control element and a control device. Based on the signal characteristic, the control circuitry controls which of multiple operating states the device operates. A method for controlling the operating state of the device includes sensing, using the detector, a signal characteristic at the terminal, and determining, using the control device, whether the signal characteristic conforms to a pre-set criteria, and when the signal characteristic does not conform to the pre-set criteria, modifying the state of the control element to alter the operating state of the device.

公开(公告)号：US09531328B2

公开(公告)日：2016-12-27

申请号：US14572136

申请日：2014-12-16

Applicant: FREESCALE SEMICONDUCTOR, INC.

Inventor： Jeffrey A. Frei ,  Enver Krvavac ,  Hussain H. Ladhani

IPC: H03F3/191 ,  H03F1/02 ,  H03F3/21 ,  H03F1/56 ,  H05K13/04 ,  H01L23/66 ,  H03F3/193 ,  H03F3/195 ,  H03F3/217

CPC classification number: H03F1/0288 ,  H01L23/66 ,  H01L2224/49175 ,  H01L2924/0002 ,  H03F1/565 ,  H03F3/193 ,  H03F3/195 ,  H03F3/211 ,  H03F3/2171 ,  H03F2200/451 ,  H03F2203/21106 ,  H05K13/046 ,  H01L2924/00

Abstract: An embodiment of a packaged radio frequency (RF) amplifier device includes a transistor and an inverse class-F circuit configured to harmonically terminate the device. The transistor has a control terminal and first and second current carrying terminals. The control terminal is coupled to an input lead of the device, and the first current carrying terminal is coupled to a voltage reference. The inverse class-F circuit is coupled between the second current carrying terminal and an output lead. The inverse class-F circuit includes a shunt circuit coupled between a cold point node and the voltage reference, where the cold point node corresponds to a second harmonic frequency cold point for the device. The shunt circuit adds a shunt negative susceptance at a fundamental frequency F0 to the inverse class-F circuit.

Abstract translation: 封装的射频（RF）放大器装置的实施例包括晶体管和被配置为谐波地终止装置的反阶级F电路。 晶体管具有控制端子和第一和第二载流端子。 控制端子耦合到装置的输入引线，第一载流端子耦合到电压基准。 反相F电路耦合在第二载流端子和输出引线之间。 反F类电路包括耦合在冷点节点和电压基准之间的分流电路，其中冷点节点对应于器件的二次谐波频率冷点。 分流电路将基频F0的分流负电感加到反F类电路上。