公开(公告)号：US20220243358A1

公开(公告)日：2022-08-04

申请号：US17555680

申请日：2021-12-20

Applicant: Fujikoshi Machinery Corp. ,  SHINSHU UNIVERSITY

Inventor： Keigo HOSHIKAWA ,  Toshinori TAISHI ,  Takumi KOBAYASHI ,  Yoshio OTSUKA ,  Etsuko OHBA

IPC: C30B11/00 ,  C30B29/16

Abstract: A production apparatus for a metal oxide single crystal according to one aspect of the present invention includes: a furnace having an interior heated to a temperature of 1,500° C. or more in an oxidative atmosphere, a heater heating the interior of the furnace, an inlet pipe being disposed in a lower part of the furnace and connecting an interior and an exterior of the furnace, an exhaust pipe being disposed in an upper part of the furnace and connecting an interior and an exterior of the furnace, a duct being disposed above the furnace, and an exhaust fan and a harmful substance elimination device being disposed in the middle of the duct.

公开(公告)号：US20220243357A1

公开(公告)日：2022-08-04

申请号：US17533377

申请日：2021-11-23

Applicant: Fujikoshi Machinery Corp. ,  SHINSHU UNIVERSITY

Inventor： Keigo HOSHIKAWA ,  Toshinori TAISHI ,  Takumi KOBAYASHI ,  Yoshio OTSUKA

IPC: C30B11/00 ,  C30B29/16

Abstract: There is provided a production apparatus for a gallium oxide crystal using the vertical Bridgman method and a production method using the production apparatus. A production apparatus for a gallium oxide crystal using a vertical Bridgman method including: a furnace body formed of a heat resistant material; a crucible shaft freely movable vertically, being extended in the furnace body, and penetrating through a bottom portion of the furnace body in the vertical direction; a crucible for housing a material of a gallium oxide crystal, being disposed on the crucible shaft; a body heater for heating the crucible, being disposed around a periphery of the crucible; and an annealing chamber for annealing the crucible, being disposed under the furnace body, and being connected to a furnace space in the furnace body.

公开(公告)号：US20210269941A1

公开(公告)日：2021-09-02

申请号：US17183753

申请日：2021-02-24

Applicant: Fujikoshi Machinery Corp. ,  SHINSHU UNIVERSITY ,  Novel Crystal Technology, Inc.

Inventor： Keigo HOSHIKAWA ,  Takumi KOBAYASHI ,  Yoshio OTSUKA ,  Toshinori TAISHI

IPC: C30B35/00 ,  C30B11/00

Abstract: A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

公开(公告)号：US20220112622A1

公开(公告)日：2022-04-14

申请号：US17494132

申请日：2021-10-05

Applicant: Fujikoshi Machinery Corp.

Inventor： Keigo HOSHIKAWA ,  Takumi KOBAYASHI ,  Yoshio OTSUKA ,  Toshinori TAISHI

IPC: C30B11/00 ,  C30B29/16

Abstract: There is provided a production apparatus of a gallium oxide crystal using a resistance heater, the heater provided therein being capable of being provided at a low cost and capable of suppressing deformation and breakage due to heat. The production apparatus for a gallium oxide crystal according to one or more aspects of the present invention includes a furnace body constituted by a heat resistant material, a crucible disposed in the furnace body, and a heater disposed around the crucible, the heater being a resistance heater including a heating part and a conductive part having a larger diameter than the heating part connected to each other, the heating part being constituted by a material having heat resistance to 1,850° C., the conductive part being constituted by a material having heat resistance to 1,800° C.

公开(公告)号：US20210269940A1

公开(公告)日：2021-09-02

申请号：US17158652

申请日：2021-01-26

Applicant: Fujikoshi Machinery Corp.

Inventor： Keigo HOSHIKAWA ,  Takumi KOBAYASHI ,  Yoshio OTSUKA

IPC: C30B35/00 ,  C30B29/16

Abstract: A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.

公开(公告)号：US20140154958A1

公开(公告)日：2014-06-05

申请号：US14096226

申请日：2013-12-04

Applicant: National Institute of Advanced Industrial Science and Technology ,  Fujikoshi Machinery Corp.

Inventor： Yoshio NAKAMURA ,  Yoshio OTSUKA ,  Takashi OKUBO ,  Kazutaka SHIBUYA ,  Takayuki FUSE ,  Shiro HARA ,  Sommawan KHUMPUANG ,  Shinichi IKEDA

IPC: B24B7/22 ,  B24B37/16 ,  B24B53/017

CPC classification number: B24B7/228 ,  B24B37/105 ,  B24B37/16 ,  B24B37/26 ,  B24B37/30 ,  B24B37/345 ,  B24B53/017

Abstract: The wafer polishing apparatus comprises a polishing plate, a polishing head capable of holding a wafer, and a slurry supplying section. The polishing plate includes: a plurality of concentric polishing zones, each of which has a prescribed width for polishing the wafer and on each of which a polishing cloth is adhered; and a groove for discharging slurry being formed between the polishing zones. A head cleaning section, which cleans the polishing head, or a wafer cleaning section, which cleans the polished wafer, is provided to a center part of the polishing plate and located on the inner side of the innermost polishing zone.

Abstract translation: 晶片抛光装置包括抛光板，能够保持晶片的抛光头和浆料供应部分。 抛光板包括：多个同心抛光区，每个同心抛光区具有用于抛光晶片的规定宽度，并且其中每个抛光区附着有抛光布; 以及用于在抛光区之间形成的用于排出浆料的槽。 清洗抛光头的清洁部分或清洁抛光晶片的晶片清洁部分设置在抛光板的中心部分并位于最内侧抛光区的内侧。