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1.发明申请公开(公告)号：US20220243357A1
公开(公告)日：2022-08-04
申请号：US17533377
申请日：2021-11-23
Applicant: Fujikoshi Machinery Corp. , SHINSHU UNIVERSITY
Inventor： Keigo HOSHIKAWA , Toshinori TAISHI , Takumi KOBAYASHI , Yoshio OTSUKA
Abstract: There is provided a production apparatus for a gallium oxide crystal using the vertical Bridgman method and a production method using the production apparatus. A production apparatus for a gallium oxide crystal using a vertical Bridgman method including: a furnace body formed of a heat resistant material; a crucible shaft freely movable vertically, being extended in the furnace body, and penetrating through a bottom portion of the furnace body in the vertical direction; a crucible for housing a material of a gallium oxide crystal, being disposed on the crucible shaft; a body heater for heating the crucible, being disposed around a periphery of the crucible; and an annealing chamber for annealing the crucible, being disposed under the furnace body, and being connected to a furnace space in the furnace body.
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公开(公告)号：US20210269941A1
公开(公告)日：2021-09-02
申请号：US17183753
申请日：2021-02-24
Inventor： Keigo HOSHIKAWA , Takumi KOBAYASHI , Yoshio OTSUKA , Toshinori TAISHI
Abstract: A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900° C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.
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公开(公告)号：US20220243358A1
公开(公告)日：2022-08-04
申请号：US17555680
申请日：2021-12-20
Applicant: Fujikoshi Machinery Corp. , SHINSHU UNIVERSITY
Inventor： Keigo HOSHIKAWA , Toshinori TAISHI , Takumi KOBAYASHI , Yoshio OTSUKA , Etsuko OHBA
Abstract: A production apparatus for a metal oxide single crystal according to one aspect of the present invention includes: a furnace having an interior heated to a temperature of 1,500° C. or more in an oxidative atmosphere, a heater heating the interior of the furnace, an inlet pipe being disposed in a lower part of the furnace and connecting an interior and an exterior of the furnace, an exhaust pipe being disposed in an upper part of the furnace and connecting an interior and an exterior of the furnace, a duct being disposed above the furnace, and an exhaust fan and a harmful substance elimination device being disposed in the middle of the duct.
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Patent Agency Ranking
公开(公告)号：US20170306521A1
公开(公告)日：2017-10-26
申请号：US15470547
申请日：2017-03-27
Applicant: SHINSHU UNIVERSITY , Fujikoshi Machinery Corp.
Inventor： Keigo HOSHIKAWA , Takumi KOBAYASHI , Etsuko OHBA , Jun YANAGISAWA
CPC classification number: C30B11/002 , C30B11/003 , C30B11/007 , C30B29/16 , H01L21/02565 , H01L21/02625
Abstract: The apparatus for producing a gallium oxide crystal relating to the invention contains a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater, the crucible is a crucible containing a Pt-based alloy, the furnace body has an inner wall that is formed as a heat-resistant wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, and the ring shaped heat-resistant members each contain plural divided pieces that are joined to each other to the ring shape.
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5.发明公开公开(公告)号：US20230235478A1
公开(公告)日：2023-07-27
申请号：US18077455
申请日：2022-12-08
Applicant: SHINSHU UNIVERSITY , Fujikoshi Machinery Corp.
Inventor： Keigo HOSHIKAWA , Toshinori TAISHI , Takumi KOBAYASHI
CPC classification number: C30B11/002 , C30B29/16 , C30B35/002 , C30B11/003
Abstract: A production apparatus for a metal oxide single crystal according to the present invention includes a crucible for housing a crystal raw material and a seed crystal, which has a first end and a second end, and in which the crystal raw material is disposed on a first end side, and the seed crystal is disposed on a second end side, a heater that heats the crucible, and a cooling rod, which has a third end and a fourth end, and in which the third end is provided in contact with or in proximity to the second end of the crucible so as to cool the second end by depriving the second end of heat.
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公开(公告)号：US20220112622A1
公开(公告)日：2022-04-14
申请号：US17494132
申请日：2021-10-05
Applicant: Fujikoshi Machinery Corp.
Inventor： Keigo HOSHIKAWA , Takumi KOBAYASHI , Yoshio OTSUKA , Toshinori TAISHI
Abstract: There is provided a production apparatus of a gallium oxide crystal using a resistance heater, the heater provided therein being capable of being provided at a low cost and capable of suppressing deformation and breakage due to heat. The production apparatus for a gallium oxide crystal according to one or more aspects of the present invention includes a furnace body constituted by a heat resistant material, a crucible disposed in the furnace body, and a heater disposed around the crucible, the heater being a resistance heater including a heating part and a conductive part having a larger diameter than the heating part connected to each other, the heating part being constituted by a material having heat resistance to 1,850° C., the conductive part being constituted by a material having heat resistance to 1,800° C.
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公开(公告)号：US20210269940A1
公开(公告)日：2021-09-02
申请号：US17158652
申请日：2021-01-26
Applicant: Fujikoshi Machinery Corp.
Inventor： Keigo HOSHIKAWA , Takumi KOBAYASHI , Yoshio OTSUKA
Abstract: A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.
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公开(公告)号：US20180251908A1
公开(公告)日：2018-09-06
申请号：US15866952
申请日：2018-01-10
Applicant: Fujikoshi Machinery Corp. , Shinshu University
Inventor： Keigo HOSHIKAWA , Yasuyuki Fujiwara , Keiichi Kohama , Shinji Nakanishi , Takumi Kobayashi , Etsuko Ohba
CPC classification number: C30B11/002 , C22C5/04 , C30B11/003 , C30B29/16 , C30B29/30
Abstract: To provide a single crystal production apparatus that is capable of prolonging the lifetime of a heater, and capable of reducing the cost. A single crystal production apparatus of the present invention is the single crystal production apparatus which produces a single crystal of a metal oxide in an oxidative atmosphere, containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater, the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.
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