公开(公告)号：US20190006529A1

公开(公告)日：2019-01-03

申请号：US16060549

申请日：2015-12-15

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Alexander Viktorovich BOLOTNIKOV ,  Peter Almern LOSEE ,  David Alan LILIENFELD ,  James Jay MCMAHON

IPC: H01L29/872 ,  H01L29/06 ,  H01L29/16 ,  H01L29/36 ,  H01L29/66 ,  H01L29/167

CPC classification number: H01L29/872 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/36 ,  H01L29/6603

Abstract: The subject matter disclosed herein relates to silicon carbide (SiC) power devices and, more specifically, to SiC super-junction (SJ) power devices. A SiC-SJ device includes a plurality of SiC semiconductor layers of a first conductivity-type, wherein a first and a second SiC semiconductor layer of the plurality of SiC semiconductor layers comprise a termination region disposed adjacent to an active region with an interface formed therebetween, an act wherein the termination region of the first and the second SiC semiconductor layers comprises a plurality of implanted regions of a second conductivity-type, and wherein an effective doping profile of the termination region of the first SiC semiconductor layer is different from an effective doping profile of the termination region of the second SiC semiconductor layer.

公开(公告)号：US20160087091A1

公开(公告)日：2016-03-24

申请号：US14787545

申请日：2013-11-18

Applicant: GENERAL ELECTRIC COMPANY

Inventor： Stephen Daley Arthur ,  Kevin Sean MATOCHA ,  Ramakrishna RAO ,  Peter Almern LOSEE ,  Alexander Viktorovich BOLOTNIKOV

IPC: H01L29/78 ,  H03K17/687 ,  H01L27/088 ,  H01L29/10 ,  H01L29/16 ,  H01L29/423

CPC classification number: H01L29/7802 ,  H01L27/088 ,  H01L29/1083 ,  H01L29/1608 ,  H01L29/42368 ,  H01L29/66068 ,  H01L29/66712 ,  H03K17/687

Abstract: An insulated gate field-effect transistor (IGFET) device includes a semiconductor body (200) and a gate oxide (234). The semiconductor body includes a first well region (216) doped with a first type of dopant and a second well region (220) that is doped with an opposite, second type of dopant and is located within the first well region. The gate oxide includes a relatively thinner outer section (244) and a relatively thicker interior section (246). The outer section is disposed over the first well region and the second well region. The interior section is disposed over a junction gate field effect transistor region (218) of the semiconductor body doped with the second type of dopant. A conductive channel is formed through the second well region when a gate signal is applied to a gate contact (250) disposed on the gate oxide.

Abstract translation: 绝缘栅场效应晶体管（IGFET）器件包括半导体本体（200）和栅氧化层（234）。 半导体本体包括掺杂有第一类型掺杂剂的第一阱区域（216）和掺杂有相对的第二类型掺杂剂并且位于第一阱区域内的第二阱区域（220）。 栅极氧化物包括相对较薄的外部部分（244）和相对较厚的内部部分（246）。 外部部分设置在第一井区域和第二井区域上。 内部部分设置在掺杂有第二类型掺杂剂的半导体主体的结栅场效应晶体管区域（218）上。 当栅极信号施加到设置在栅极氧化物上的栅极接触（250）时，通过第二阱区形成导电沟道。