公开(公告)号：US09337289B2

公开(公告)日：2016-05-10

申请号：US14571628

申请日：2014-12-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Zhengwen Li ,  Dechao Guo ,  Randolph F. Knarr ,  Chengwen Pei ,  Gan Wang ,  Yanfeng Wang ,  Keith Kwong Hon Wong ,  Jian Yu ,  Jun Yuan

IPC: H01L21/70 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/42368 ,  H01L29/42376 ,  H01L29/49 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66606 ,  H01L29/78 ,  H01L29/7833

Abstract: In a replacement gate scheme, a continuous material layer is deposited on a bottom surface and a sidewall surface in a gate cavity. A vertical portion of the continuous material layer is removed to form a gate component of which a vertical portion does not extend to a top of the gate cavity. The gate component can be employed as a gate dielectric or a work function metal portion to form a gate structure that enhances performance of a replacement gate field effect transistor.