公开(公告)号：US20160379872A1

公开(公告)日：2016-12-29

申请号：US14752210

申请日：2015-06-26

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Vimal KAMINENI ,  Nicholas Vincent LICAUSI ,  Shariq SIDDIQUI ,  Jeremy Austin WAHL

IPC: H01L21/768 ,  H01L23/535

CPC classification number: H01L21/76834 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/76805 ,  H01L21/76814 ,  H01L23/535

Abstract: A method can include forming a contact trench in a semiconductor structure so that the contact trench extends to a contact formation, the forming including using a hardmask layer, and filling the contact trench with a sacrificial material layer, the sacrificial material layer formed over the contact formation. A semiconductor structure can include a sacrificial material layer over a contact formation.

Abstract translation: 一种方法可以包括在半导体结构中形成接触沟槽，使得接触沟槽延伸到接触层，形成包括使用硬掩模层，并用牺牲材料层填充接触沟槽，牺牲材料层形成在触点上 形成。 半导体结构可以包括在接触层上的牺牲材料层。

公开(公告)号：US20160254145A1

公开(公告)日：2016-09-01

申请号：US14633246

申请日：2015-02-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Dina H. TRIYOSO ,  Wei Hua TONG ,  Haoran SHI ,  Jeremy Austin WAHL ,  Amy Lynn CHILD

IPC: H01L21/02 ,  H01L21/225 ,  H01L29/165 ,  H01L29/16 ,  H01L29/161

CPC classification number: H01L21/02236 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/18 ,  H01L21/823807 ,  H01L21/84 ,  H01L29/165

Abstract: Methods of forming condensed first layer and semiconductor structures formed from the methods are provided. The methods include, for instance providing at least one layer disposed over a substrate structure of a semiconductor structure, wherein the substrate structure includes an upper silicon region; and performing at least one oxidation process of the semiconductor structure, the at least one oxidation process reducing a thickness of the upper region, wherein the performing facilitates diffusing to form a condensed layer over the substrate structure.

Abstract translation: 提供了由该方法形成的聚集的第一层和半导体结构的方法。 所述方法包括例如提供设置在半导体结构的衬底结构上的至少一层，其中衬底结构包括上硅区; 以及执行所述半导体结构的至少一个氧化工艺，所述至少一个氧化工艺减小所述上部区域的厚度，其中所述执行有助于扩散以在所述衬底结构上形成冷凝层。