公开(公告)号：US20150024585A1

公开(公告)日：2015-01-22

申请号：US13946485

申请日：2013-07-19

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Tien-Ying LUO ,  Feng ZHOU ,  Yan Ping SHEN ,  Haiting WANG ,  Haoran SHI ,  Wei Hua TONG ,  Seung KIM ,  Yong Meng LEE

IPC: H01L21/28

CPC classification number: H01L21/28088 ,  H01L21/28176 ,  H01L29/6659

Abstract: A method includes forming a gate structure by growing an interfacial layer on a substrate, depositing a High K layer on the interfacial layer, depositing a TiN Cap on the High K layer and forming a thin barrier layer on the TiN Cap. The gate structure is annealed.

Abstract translation: 一种方法包括通过在衬底上生长界面层来形成栅极结构，在界面层上沉积高K层，在高K层上沉积TiN帽并在TiN帽上形成薄的阻挡层。 栅极结构退火。

公开(公告)号：US20150017774A1

公开(公告)日：2015-01-15

申请号：US13938786

申请日：2013-07-10

Applicant: GLOBALFOUNDRIES INC.

Inventor： Wei Hua TONG ,  Hong YU ,  Jin Ping LIU ,  Hyucksoo YANG ,  Lun ZHAO ,  Chandra REDDY

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/7848 ,  H01L21/02057 ,  H01L21/02236 ,  H01L21/823431 ,  H01L29/7854

Abstract: Thermal oxidation treatment methods and processes used during fabrication of semiconductor devices are provided. One method includes, for instance: obtaining a device with at least one cavity etched into the device; performing a thermal oxidation treatment to the at least one cavity; and cleaning the at least one cavity. One process includes, for instance: providing a semiconductor device with a substrate, at least one layer over the substrate and at least one fin; forming at least one gate over the fin; doping at least one region below the fin; applying a spacer layer over the device; etching the spacer layer to expose at least a portion of the gate material; etching a cavity into the at least one fin; etching a shaped opening into the cavity; performing thermal oxidation processing on the at least one cavity; and growing at least one epitaxial layer on an interior surface of the cavity.

Abstract translation: 提供了在制造半导体器件期间使用的热氧化处理方法和工艺。 一种方法包括例如：获得具有蚀刻到该装置中的至少一个腔的装置; 对所述至少一个腔进行热氧化处理; 以及清洁所述至少一个腔。 一个过程包括例如：提供具有衬底的半导体器件，衬底上的至少一个层和至少一个鳍; 在翅片上形成至少一个闸门; 掺杂鳍片以下的至少一个区域; 在该装置上施加间隔层; 蚀刻间隔层以露出栅极材料的至少一部分; 将空腔蚀刻到所述至少一个翅片中; 将成形的开口蚀刻到空腔中; 在所述至少一个腔体上进行热氧化处理; 以及在腔的内表面上生长至少一个外延层。

公开(公告)号：US20150255277A1

公开(公告)日：2015-09-10

申请号：US14200197

申请日：2014-03-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Wei Hua TONG ,  Tien-Ying LUO ,  Yan Ping SHEN ,  Feng ZHOU ,  Jun LIAN ,  Haoran SHI ,  Min-hwa CHI ,  Jin Ping LIU ,  Haiting WANG ,  Seung KIM

IPC: H01L21/02 ,  H01L29/51 ,  H01L21/324 ,  H01L29/78

CPC classification number: H01L29/7851 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02312 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/321 ,  H01L21/324 ,  H01L29/511 ,  H01L29/512 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66795 ,  H01L29/785

Abstract: Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.

Abstract translation: 提供具有一个或多个氮化保形层的鳍式晶体管制造方法和结构，以提高半导体器件的可靠性。 该方法包括例如提供至少一个材料层，该材料层部分地保形地设置在衬底上延伸的翅片上，所述材料层包括栅极电介质层; 以及在所述材料层的暴露表面上进行保形氮化处理，所述共形氮化工艺形成暴露的共形氮化表面。

公开(公告)号：US20160254145A1

公开(公告)日：2016-09-01

申请号：US14633246

申请日：2015-02-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Dina H. TRIYOSO ,  Wei Hua TONG ,  Haoran SHI ,  Jeremy Austin WAHL ,  Amy Lynn CHILD

IPC: H01L21/02 ,  H01L21/225 ,  H01L29/165 ,  H01L29/16 ,  H01L29/161

CPC classification number: H01L21/02236 ,  H01L21/02255 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/18 ,  H01L21/823807 ,  H01L21/84 ,  H01L29/165

Abstract: Methods of forming condensed first layer and semiconductor structures formed from the methods are provided. The methods include, for instance providing at least one layer disposed over a substrate structure of a semiconductor structure, wherein the substrate structure includes an upper silicon region; and performing at least one oxidation process of the semiconductor structure, the at least one oxidation process reducing a thickness of the upper region, wherein the performing facilitates diffusing to form a condensed layer over the substrate structure.

Abstract translation: 提供了由该方法形成的聚集的第一层和半导体结构的方法。 所述方法包括例如提供设置在半导体结构的衬底结构上的至少一层，其中衬底结构包括上硅区; 以及执行所述半导体结构的至少一个氧化工艺，所述至少一个氧化工艺减小所述上部区域的厚度，其中所述执行有助于扩散以在所述衬底结构上形成冷凝层。

公开(公告)号：US20160190324A1

公开(公告)日：2016-06-30

申请号：US15059793

申请日：2016-03-03

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Wei Hua TONG ,  Tien-Ying LUO ,  Yan Ping SHEN ,  Feng ZHOU ,  Jun LIAN ,  Haoran SHI ,  Min-hwa CHI ,  Jin Ping LIU ,  Haiting WANG ,  Seung KIM

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/7851 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02312 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/321 ,  H01L21/324 ,  H01L29/511 ,  H01L29/512 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66795 ,  H01L29/785

Abstract: Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.