公开(公告)号：US20170110376A1

公开(公告)日：2017-04-20

申请号：US14882869

申请日：2015-10-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruqiang BAO ,  Takashi ANDO ,  Aritra DASGUPTA ,  Kai ZHAO ,  Unoh KWON ,  Siddarth A. KRISHNAN

IPC: H01L21/8238 ,  H01L21/28 ,  H01L21/311 ,  H01L21/02 ,  H01L27/092 ,  H01L29/51

CPC classification number: H01L21/823857 ,  H01L21/02181 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/823842 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/517

Abstract: The disclosure relates to semiconductor structures and, more particularly, to structures with thinned dielectric material and methods of manufacture. The method includes depositing a high-k dielectric on a substrate. The method further includes depositing a titanium nitride film directly on the high-k while simultaneously etching the high-k dielectric.

公开(公告)号：US20170207134A1

公开(公告)日：2017-07-20

申请号：US15476158

申请日：2017-03-31

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruqiang BAO ,  Takashi ANDO ,  Aritra DASGUPTA ,  Kai ZHAO ,  Unoh KWON ,  Siddarth A. KRISHNAN

IPC: H01L21/8238 ,  H01L21/311 ,  H01L21/285 ,  H01L29/51 ,  H01L21/28 ,  H01L29/49 ,  H01L21/02

CPC classification number: H01L21/823857 ,  H01L21/02181 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/823842 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/517

Abstract: The disclosure relates to semiconductor structures and, more particularly, to structures with thinned dielectric material and methods of manufacture. The method includes depositing a high-k dielectric on a substrate. The method further includes depositing a titanium nitride film directly on the high-k while simultaneously etching the high-k dielectric.