公开(公告)号：US20170207134A1

公开(公告)日：2017-07-20

申请号：US15476158

申请日：2017-03-31

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruqiang BAO ,  Takashi ANDO ,  Aritra DASGUPTA ,  Kai ZHAO ,  Unoh KWON ,  Siddarth A. KRISHNAN

IPC: H01L21/8238 ,  H01L21/311 ,  H01L21/285 ,  H01L29/51 ,  H01L21/28 ,  H01L29/49 ,  H01L21/02

CPC classification number: H01L21/823857 ,  H01L21/02181 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/823842 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/517

Abstract: The disclosure relates to semiconductor structures and, more particularly, to structures with thinned dielectric material and methods of manufacture. The method includes depositing a high-k dielectric on a substrate. The method further includes depositing a titanium nitride film directly on the high-k while simultaneously etching the high-k dielectric.

公开(公告)号：US20170250117A1

公开(公告)日：2017-08-31

申请号：US15055826

申请日：2016-02-29

Applicant: GLOBALFOUNDRIES INC.

Inventor： Balaji KANNAN ,  Unoh KWON ,  Siddarth KRISHNAN ,  Takashi ANDO ,  Vijay NARAYANAN

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L21/324 ,  H01L21/225

CPC classification number: H01L29/66545 ,  H01L21/823842 ,  H01L21/823857 ,  H01L27/092 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/518

Abstract: Semiconductor device fabrication methods are provided which include: providing a structure with at least one region and including a dielectric layer disposed over a substrate; forming a multilayer stack structure including a threshold-voltage adjusting layer over the dielectric layer, the multilayer stack structure including a first threshold-voltage adjusting layer in a first region of the at least one region, and a second threshold-voltage adjusting layer in a second region of the at least one region; and annealing the structure to define a varying threshold voltage of the at least one region, the annealing facilitating diffusion of at least one threshold voltage adjusting species from the first threshold-voltage adjusting layer and the second threshold-voltage adjusting layer into the dielectric layer, where a threshold voltage of the first region is independent of the threshold voltage of the second region.

公开(公告)号：US20170110376A1

公开(公告)日：2017-04-20

申请号：US14882869

申请日：2015-10-14

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ruqiang BAO ,  Takashi ANDO ,  Aritra DASGUPTA ,  Kai ZHAO ,  Unoh KWON ,  Siddarth A. KRISHNAN

IPC: H01L21/8238 ,  H01L21/28 ,  H01L21/311 ,  H01L21/02 ,  H01L27/092 ,  H01L29/51

CPC classification number: H01L21/823857 ,  H01L21/02181 ,  H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/823842 ,  H01L27/092 ,  H01L27/0922 ,  H01L29/4966 ,  H01L29/517

Abstract: The disclosure relates to semiconductor structures and, more particularly, to structures with thinned dielectric material and methods of manufacture. The method includes depositing a high-k dielectric on a substrate. The method further includes depositing a titanium nitride film directly on the high-k while simultaneously etching the high-k dielectric.