公开(公告)号：US20200135545A1

公开(公告)日：2020-04-30

申请号：US16171477

申请日：2018-10-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ravi P. SRIVASTAVA ,  Sipeng GU ,  Sunil K. SINGH ,  Xinyuan DOU ,  Akshey SEHGAL ,  Zhiguo SUN

IPC: H01L21/768 ,  H01L21/02

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to smooth sidewall structures and methods of manufacture. The method includes: forming a plurality of mandrel structures; forming a first spacer material on each of the plurality of mandrel structures; forming a second spacer material over the first spacer material; and removing the first spacer material and the plurality of mandrel structures to form a sidewall structure having a sidewall smoothness greater than the plurality of mandrel structures.

公开(公告)号：US20200083099A1

公开(公告)日：2020-03-12

申请号：US16124786

申请日：2018-09-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qanit TAKMEEL ,  Somnath GHOSH ,  Anbu Selvam K M MAHALINGAM ,  Craig M. CHILD ,  Sunil K. SINGH

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/288 ,  H01L21/311

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to via structures and via patterning using oblique angle deposition processes. The method includes: depositing a material on a lower wiring layer; forming one or more openings in the material; filling the one or more openings with a conductive material; growing via structures on the conductive material; forming interlevel dielectric material on the via structures; and forming an upper wiring layer on the interlevel dielectric material and in contact with the via structures.