公开(公告)号：US20200135545A1

公开(公告)日：2020-04-30

申请号：US16171477

申请日：2018-10-26

Applicant: GLOBALFOUNDRIES INC.

Inventor： Ravi P. SRIVASTAVA ,  Sipeng GU ,  Sunil K. SINGH ,  Xinyuan DOU ,  Akshey SEHGAL ,  Zhiguo SUN

IPC: H01L21/768 ,  H01L21/02

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to smooth sidewall structures and methods of manufacture. The method includes: forming a plurality of mandrel structures; forming a first spacer material on each of the plurality of mandrel structures; forming a second spacer material over the first spacer material; and removing the first spacer material and the plurality of mandrel structures to form a sidewall structure having a sidewall smoothness greater than the plurality of mandrel structures.

公开(公告)号：US20210005454A1

公开(公告)日：2021-01-07

申请号：US17023853

申请日：2020-09-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hsueh-Chung CHEN ,  Ravi P. SRIVASTAVA ,  Somnath GHOSH ,  Nicholas V. LICAUSI ,  Terry A. SPOONER ,  Sean REIDY

IPC: H01L21/033

Abstract: The present disclosure relates to a structure which includes a first metal layer patterned as a mandrel, a dielectric spacer on the first metal layer, and a second metal layer on the dielectric spacer.

公开(公告)号：US20200083043A1

公开(公告)日：2020-03-12

申请号：US16125066

申请日：2018-09-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hsueh-Chung CHEN ,  Ravi P. SRIVASTAVA ,  Somnath GHOSH ,  Nicholas V. LICAUSI ,  Terry A. SPOONER ,  Sean REIDY

IPC: H01L21/033

Abstract: The present disclosure relates to a structure which includes a first metal layer patterned as a mandrel, a dielectric spacer on the first metal layer, and a second metal layer on the dielectric spacer.