公开(公告)号：US20200083099A1

公开(公告)日：2020-03-12

申请号：US16124786

申请日：2018-09-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Qanit TAKMEEL ,  Somnath GHOSH ,  Anbu Selvam K M MAHALINGAM ,  Craig M. CHILD ,  Sunil K. SINGH

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/288 ,  H01L21/311

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to via structures and via patterning using oblique angle deposition processes. The method includes: depositing a material on a lower wiring layer; forming one or more openings in the material; filling the one or more openings with a conductive material; growing via structures on the conductive material; forming interlevel dielectric material on the via structures; and forming an upper wiring layer on the interlevel dielectric material and in contact with the via structures.

公开(公告)号：US20210005454A1

公开(公告)日：2021-01-07

申请号：US17023853

申请日：2020-09-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hsueh-Chung CHEN ,  Ravi P. SRIVASTAVA ,  Somnath GHOSH ,  Nicholas V. LICAUSI ,  Terry A. SPOONER ,  Sean REIDY

IPC: H01L21/033

Abstract: The present disclosure relates to a structure which includes a first metal layer patterned as a mandrel, a dielectric spacer on the first metal layer, and a second metal layer on the dielectric spacer.

公开(公告)号：US20200083043A1

公开(公告)日：2020-03-12

申请号：US16125066

申请日：2018-09-07

Applicant: GLOBALFOUNDRIES INC.

Inventor： Hsueh-Chung CHEN ,  Ravi P. SRIVASTAVA ,  Somnath GHOSH ,  Nicholas V. LICAUSI ,  Terry A. SPOONER ,  Sean REIDY

IPC: H01L21/033

Abstract: The present disclosure relates to a structure which includes a first metal layer patterned as a mandrel, a dielectric spacer on the first metal layer, and a second metal layer on the dielectric spacer.