公开(公告)号：US20150270159A1

公开(公告)日：2015-09-24

申请号：US14220260

申请日：2014-03-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Haigou HUANG ,  Hongliang SHEN ,  Huang LIU ,  Tao HAN ,  Xiang HU

IPC: H01L21/762 ,  H01L21/324 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/02

CPC classification number: H01L21/76229 ,  H01L21/3081 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/31111

Abstract: Semiconductor structure fabrication methods are provided which include: forming one or more trenches and a plurality of plateaus within a substrate structure; providing a conformal stop layer over the substrate structure, including over the plurality of plateaus, the conformal stop layer being or including oxidized polycrystalline silicon; depositing a material over the substrate structure to fill the one or more trenches and cover the plurality of plateaus thereof; and planarizing the material using a slurry to form coplanar surfaces of the material and the conformal stop layer, wherein the slurry reacts with the oxidized polycrystalline silicon of the conformal stop layer to facilitate providing the coplanar surfaces with minimal dishing of the material. Various embodiments are provided, including different methods of providing the conformal stop layer, such as by oxidizing at least an upper portion of polycrystalline silicon, or by performing an in-situ steam growth process.

Abstract translation: 提供半导体结构制造方法，其包括：在衬底结构内形成一个或多个沟槽和多个平台; 在所述衬底结构上提供保形停止层，包括在所述多个平台上，所述共形停止层包括氧化的多晶硅; 在衬底结构上沉积材料以填充所述一个或多个沟槽并覆盖其多个平台; 并且使用浆料平坦化材料以形成材料和共形停止层的共面表面，其中浆料与保形停止层的氧化多晶硅反应，以便于提供最小的凹陷的共面表面。 提供了各种实施例，包括提供保形停止层的不同方法，例如通过氧化至少多晶硅的上部，或者通过进行原位蒸汽生长过程。

公开(公告)号：US20200161122A1

公开(公告)日：2020-05-21

申请号：US16193313

申请日：2018-11-16

Applicant: GLOBALFOUNDRIES INC.

Inventor： Man GU ,  Tao HAN ,  Charlotte D. ADAMS

IPC: H01L21/02 ,  H01L21/311 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a spacer with laminate liner and methods of manufacture. The structure includes: a replacement metal gate structure; a laminate low-k liner on the replacement metal gate structure; and a spacer on the laminate low-k liner.