公开(公告)号：US20160047058A1

公开(公告)日：2016-02-18

申请号：US14928088

申请日：2015-10-30

Applicant: GLOBALFOUNDRIES Inc

Inventor： Shafaat Ahmed ,  Michael P. Chudzik ,  Lubomyr T. Romankiw

IPC: C25D21/04 ,  C25D5/08 ,  C25D17/00 ,  C25D21/10 ,  C25D5/04 ,  C25D5/20

CPC classification number: C25D21/04 ,  C25D5/04 ,  C25D5/08 ,  C25D5/20 ,  C25D7/123 ,  C25D17/001 ,  C25D17/008 ,  C25D21/10

Abstract: An electroplating apparatus includes an anode configured to electrically communicate with an electrical voltage and an electrolyte solution. A cathode module includes a cathode that is configured to electrically communicate with a ground potential and the electrolyte solution. The cathode module further includes a wafer in electrical communication with the cathode. The wafer is configured to receive metal ions from the anode in response to current flowing through the anode via electrodeposition. The electroplating apparatus further includes at least one agitating device interposed between the wafer and the anode. The agitating device is configured to apply a force to gas bubbles adhering to a surface of the wafer facing the agitating device.

Abstract translation: 电镀设备包括被配置为与电压和电解质溶液电连通的阳极。 阴极模块包括被配置为与地电位和电解质溶液电连通的阴极。 阴极模块还包括与阴极电连通的晶片。 晶片被配置为响应于电流通过电沉积而流过阳极而从阳极接收金属离子。 电镀装置还包括插入在晶片和阳极之间的至少一个搅拌装置。 搅拌装置构造成对粘附到面向搅拌装置的晶片表面的气泡施加力。

公开(公告)号：US20160155889A1

公开(公告)日：2016-06-02

申请号：US15018398

申请日：2016-02-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shafaat Ahmed ,  Hariklia Deligianni ,  Qiang Huang ,  Lubomyr T. Romankiw ,  Raman Vaidyanathan

IPC: H01L31/18 ,  C25D17/00 ,  H01L31/0749

CPC classification number: H01L31/1876 ,  C25D17/001 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

Abstract: In one aspect, a method for fabricating a thin film solar cell includes the following steps. A first absorber material is deposited as a layer A on a substrate while applying pressure to the substrate/layer A. A second absorber material is deposited as a layer B on layer A while applying pressure to the substrate/layer B. A third absorber material is deposited as a layer C on layer B while applying pressure to the substrate/layer C. A fourth absorber material is deposited as a layer D on layer C while applying pressure to the substrate/layer D. The first absorber material comprises copper, the second absorber material comprises indium, the third absorber material comprises gallium, and the fourth absorber material comprises one or more of sulfur and selenium, and wherein by way of performing the steps of claim 1 a chalcogenide absorber layer is formed on the substrate.

Abstract translation: 一方面，制造薄膜太阳能电池的方法包括以下步骤。 第一吸收材料作为层A沉积在衬底上，同时向衬底/层A施加压力。第二吸收剂材料作为层B沉积在层A上，同时向衬底/层B施加压力。第三吸收材料 在层B上沉积为层C，同时向衬底/层C施加压力。第四吸收材料作为层C沉积在层C上，同时向衬底/层D施加压力。第一吸收材料包括铜， 第二吸收体材料包括铟，第三吸收体材料包括镓，第四吸收体材料包括硫和硒中的一种或多种，​​并且其中通过执行权利要求1的步骤，在衬底上形成硫族化物吸收层。

公开(公告)号：US09293632B2

公开(公告)日：2016-03-22

申请号：US14030019

申请日：2013-09-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Shafaat Ahmed ,  Hariklia Deligianni ,  Qiang Huang ,  Lubomyr T. Romankiw ,  Raman Vaidyanathan

IPC: H01L31/18 ,  H01L21/02

CPC classification number: H01L31/1876 ,  C25D17/001 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02521 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0749 ,  H01L31/18 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

Abstract: In one aspect, a method for fabricating a thin film solar cell includes the following steps. A first absorber material is deposited as a layer A on a substrate while applying pressure to the substrate/layer A. A second absorber material is deposited as a layer B on layer A while applying pressure to the substrate/layer B. A third absorber material is deposited as a layer C on layer B while applying pressure to the substrate/layer C. A fourth absorber material is deposited as a layer D on layer C while applying pressure to the substrate/layer D. The first absorber material comprises copper, the second absorber material comprises indium, the third absorber material comprises gallium, and the fourth absorber material comprises one or more of sulfur and selenium, and wherein by way of performing the steps of claim 1 a chalcogenide absorber layer is formed on the substrate.

Abstract translation: 一方面，制造薄膜太阳能电池的方法包括以下步骤。 第一吸收材料作为层A沉积在衬底上，同时向衬底/层A施加压力。第二吸收剂材料作为层B沉积在层A上，同时向衬底/层B施加压力。第三吸收材料 在层B上沉积为层C，同时向衬底/层C施加压力。第四吸收材料作为层C沉积在层C上，同时向衬底/层D施加压力。第一吸收材料包括铜， 第二吸收体材料包括铟，第三吸收体材料包括镓，第四吸收体材料包括硫和硒中的一种或多种，​​并且其中通过执行权利要求1的步骤，在衬底上形成硫族化物吸收层。