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公开(公告)号：US20170146592A1
公开(公告)日：2017-05-25
申请号：US14945520
申请日：2015-11-19
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Gregory G. Freeman , Siyuranga Koswatta , Paul S. McLaughlin , Daniel J. Poindexter , J. Campbell Scott , Scott Taylor , Gregory Uhlmann , James D. Warnock
IPC: G01R31/28
CPC classification number: G01R31/2858 , G01R31/2884
Abstract: A sensor for on-chip monitoring the effects of operating conditions on a circuit, Integrated Circuit (IC) chips including the sensors, and a method of monitoring operating condition effects on-chip circuits, e.g., for the occurrence of electromigration. The sensor includes a multi-fingered driver associated with a monitored circuit, sensitive to known circuit parameter sensitivities. Sense and control logic circuit selectively driving the multi-fingered driver, and selectively monitoring for an expected multi-fingered driver response.
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公开(公告)号：US10191108B2
公开(公告)日：2019-01-29
申请号：US14945520
申请日：2015-11-19
Applicant: GLOBALFOUNDRIES Inc.
Inventor： Gregory G. Freeman , Siyuranga Koswatta , Paul S. McLaughlin , Daniel J. Poindexter , J. Campbell Scott , Scott Taylor , Gregory Uhlmann , James D. Warnock
Abstract: A sensor for on-chip monitoring the effects of operating conditions on a circuit, Integrated Circuit (IC) chips including the sensors, and a method of monitoring operating condition effects on-chip circuits, e.g., for the occurrence of electromigration. The sensor includes a multi-fingered driver associated with a monitored circuit, sensitive to known circuit parameter sensitivities. Sense and control logic circuit selectively driving the multi-fingered driver, and selectively monitoring for an expected multi-fingered driver response.
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3.发明授权Method for an efficient modeling of the impact of device-level self-heating on electromigration limited current specifications 有权用于对器件级自加热对电迁移限制电流规格的影响的有效建模的方法公开(公告)号：US09552455B2
公开(公告)日：2017-01-24
申请号：US14612683
申请日：2015-02-03
Applicant: GLOBALFOUNDRIES INC.
Inventor： Daniel J. Poindexter , Gregory G. Freeman , Siyuranga O. Koswatta , J. Campbell Scott , Leon J. Sigal , James D. Warnock
IPC: G06F17/50
CPC classification number: G06F17/5081 , G06F17/5036
Abstract: An efficient method of calculating maximum current limits for library gates in which a current limit includes the impact of self-heating effects associated with the maximum current. A maximum current solution is obtained in a self-consistent fashion, providing a way of determining the self-consistent solution in a rapid fashion without extensive numerical calculations or simulations. The present method provides a practical approach for characterizing a large library of gates for use in CMOS designs.
Abstract translation: 计算库门最大电流限制的有效方法，其中电流限制包括与最大电流相关联的自热效应的影响。 以自我一致的方式获得最大的当前解决方案，提供了一种在没有广泛的数值计算或模拟的情况下以快速方式确定自相矛盾解决方案的方式。 本方法提供了用于表征CMOS设计中使用的大型门库的实用方法。
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4.发明申请公开(公告)号：US20160224717A1
公开(公告)日：2016-08-04
申请号：US14612683
申请日：2015-02-03
Applicant: GLOBALFOUNDRIES INC.
Inventor： Daniel J. Poindexter , Gregory G. Freeman , Siyuranga O. Koswatta , J. Campbell Scott , Leon J. Sigal , James D. Warnock
IPC: G06F17/50
CPC classification number: G06F17/5081 , G06F17/5036
Abstract: An efficient method of calculating maximum current limits for library gates in which a current limit includes the impact of self-heating effects associated with the maximum current. A maximum current solution is obtained in a self-consistent fashion, providing a way of determining the self-consistent solution in a rapid fashion without extensive numerical calculations or simulations. The present method provides a practical approach for characterizing a large library of gates for use in CMOS designs.
Abstract translation: 计算库门最大电流限制的有效方法，其中电流限制包括与最大电流相关联的自热效应的影响。 以自我一致的方式获得最大的当前解决方案，提供了一种在没有广泛的数值计算或模拟的情况下以快速方式确定自相矛盾解决方案的方式。 本方法提供了用于表征CMOS设计中使用的大型门库的实用方法。
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