公开(公告)号：US20140252424A1

公开(公告)日：2014-09-11

申请号：US13785403

申请日：2013-03-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xiuyu Cai ,  Ruilong Xie ,  John A. Iacoponi

IPC: H01L21/768 ,  H01L23/48 ,  H01L29/40

CPC classification number: H01L29/401 ,  H01L21/76831 ,  H01L21/76897 ,  H01L21/823821 ,  H01L21/82385 ,  H01L21/823864 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

Abstract: One method discloses performing an etching process to form a contact opening in a layer of insulating material above at least a portion of a source/drain, region wherein, after the completion of the etching process, a portion of a gate structure of the transistor is exposed, selectively forming an oxidizable material on the exposed gate structure, converting at least a portion of the oxidizable material to an oxide material, and forming a conductive contact in the contact opening that is conductively coupled to the source/drain region. A novel transistor device disclosed herein includes an oxide material positioned between a conductive contact and a gate structure of the transistor, wherein the oxide material contacts the conductive contact and contacts a portion, but not all, of the exterior surface of the gate structure.

Abstract translation: 一种方法公开了进行蚀刻工艺以在源极/漏极区域的至少一部分上方的绝缘材料层中形成接触开口，其中在蚀刻工艺完成之后，晶体管的栅极结构的一部分是 暴露的，在暴露的栅极结构上选择性地形成可氧化材料，将可氧化材料的至少一部分转化为氧化物材料，以及在导电耦合到源/漏区的接触开口中形成导电接触。 本文公开的新型晶体管器件包括位于晶体管的导电接触和栅极结构之间的氧化物材料，其中氧化物材料接触导电接触并接触栅极结构的外表面的一部分但不全部接触。

公开(公告)号：US10050118B2

公开(公告)日：2018-08-14

申请号：US14269566

申请日：2014-05-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Ryan Ryoung-han Kim ,  Chanro Park ,  William James Taylor, Jr. ,  John A. Iacoponi

IPC: H01L29/66 ,  H01L21/336 ,  H01L29/06 ,  H01L29/78

Abstract: In one aspect a semiconductor device as set forth herein can include a spacer having a first section of a first material and a second section of a second material, the second section disposed above a certain elevation and the first section disposed below the certain elevation. In one aspect a semiconductor device as set forth herein can include a conductive gate structure having a first length at elevations below a certain elevation and a second length at elevations above the certain elevation, the second length being less than the first length. A semiconductor device having one or more of a plural material spacer or a reduced length upper elevation conductive gate structure can feature a reduced likelihood of electrical shorting.

公开(公告)号：US08946075B2

公开(公告)日：2015-02-03

申请号：US13785468

申请日：2013-03-05

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Xiuyu Cai ,  Ruilong Xie ,  John A. Iacoponi

IPC: H01L21/4763 ,  H01L21/768 ,  H01L29/78

CPC classification number: H01L21/76897 ,  H01L21/28247 ,  H01L21/76831 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: One method includes performing a first etching process to form a contact opening in a layer of insulating material that exposes a portion of a gate structure of the transistor, performing a second etching process on the exposed portion of the gate structure to thereby define a gate recess, selectively forming an oxidizable material in the gate recess, converting the oxidizable material to an oxide material, and forming a conductive contact in the contact opening that is conductively coupled to a source/drain region. A device includes an oxide material that is positioned at least partially in a recess formed in a gate structure, wherein the oxide material contacts a conductive contact and contacts a portion, but not all, of the exterior surface of the gate structure.

Abstract translation: 一种方法包括执行第一蚀刻工艺以在暴露晶体管的栅极结构的一部分的绝缘材料层中形成接触开口，对栅极结构的暴露部分执行第二蚀刻工艺，由此限定栅极凹部 在所述栅极凹槽中选择性地形成可氧化材料，将所述可氧化材料转化为氧化物材料，以及在与所述源极/漏极区域导电耦合的所述接触开口中形成导电接触。 一种器件包括至少部分地位于形成在栅极结构中的凹部中的氧化物材料，其中氧化物材料接触导电接触并接触栅极结构的外表面的一部分但并非全部。

公开(公告)号：US20140252425A1

公开(公告)日：2014-09-11

申请号：US13785468

申请日：2013-03-05

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xiuyu Cai ,  Ruilong Xie ,  John A. Iacoponi

IPC: H01L21/768 ,  H01L29/78

CPC classification number: H01L21/76897 ,  H01L21/28247 ,  H01L21/76831 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/785

Abstract: One method includes performing a first etching process to form a contact opening in a layer of insulating material that exposes a portion of a gate structure of the transistor, performing a second etching process on the exposed portion of the gate structure to thereby define a gate recess, selectively forming an oxidizable material in the gate recess, converting the oxidizable material to an oxide material, and forming a conductive contact in the contact opening that is conductively coupled to a source/drain region. A device includes an oxide material that is positioned at least partially in a recess formed in a gate structure, wherein the oxide material contacts a conductive contact and contacts a portion, but not all, of the exterior surface of the gate structure.

Abstract translation: 一种方法包括执行第一蚀刻工艺以在暴露晶体管的栅极结构的一部分的绝缘材料层中形成接触开口，对栅极结构的暴露部分执行第二蚀刻工艺，由此限定栅极凹部 在所述栅极凹槽中选择性地形成可氧化材料，将所述可氧化材料转化为氧化物材料，以及在与所述源极/漏极区域导电耦合的所述接触开口中形成导电接触。 一种器件包括至少部分地位于形成在栅极结构中的凹部中的氧化物材料，其中氧化物材料接触导电接触并接触栅极结构的外表面的一部分但并非全部。