公开(公告)号：US09349608B2

公开(公告)日：2016-05-24

申请号：US14106340

申请日：2013-12-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Zhiguo Sun ,  Daniel Smith ,  Kumarapuram Gopalakrishnan ,  Hung-Wei Liu

IPC: H01L23/48 ,  H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/31 ,  H01L23/29 ,  H01L21/308 ,  H01L21/311 ,  H01L21/321

CPC classification number: H01L21/32051 ,  H01L21/3081 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/76802 ,  H01L21/76829 ,  H01L21/7684 ,  H01L21/76846 ,  H01L21/76898 ,  H01L23/291 ,  H01L23/3192 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Devices and methods for forming semiconductor devices with a protection layer for a dielectric mask layer are provided. One method includes, for instance; obtaining a substrate having at least one of a dielectric layer and a metal layer; forming a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and forming a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer. One intermediate semiconductor device includes, for instance: a substrate having at least one of a dielectric layer and a metal layer; a first SiCN dielectric mask layer on a top surface of at least one of the dielectric layer and a metal layer; and a silicon nitride (SiNx) cap layer on a top surface of the first SiCN dielectric mask layer.

Abstract translation: 提供了用于形成具有用于介电掩模层的保护层的半导体器件的器件和方法。 一种方法包括： 获得具有电介质层和金属层中的至少一个的衬底; 在所述电介质层和金属层中的至少一个的顶表面上形成第一SiCN电介质掩模层; 以及在所述第一SiCN介电掩模层的顶表面上形成氮化硅（SiNx）覆盖层。 一个中间半导体器件包括例如：具有电介质层和金属层中的至少一个的衬底; 在所述电介质层和金属层中的至少一个的顶表面上的第一SiCN介电掩模层; 和在第一SiCN介电掩模层的顶表面上的氮化硅（SiNx）覆盖层。