公开(公告)号：US20170235867A1

公开(公告)日：2017-08-17

申请号：US15045466

申请日：2016-02-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Thomas Melde ,  Matthias U. Lehr ,  Thomas Herrmann ,  Jens Hassmann ,  Moritz Andreas Meyer ,  Rakesh Kumar Kuncha

IPC: G06F17/50

CPC classification number: G06F17/5077

Abstract: A method of Back-End-Of-Line processing of a semiconductor device is provided including providing a layout for metal lines of a metallization layer of the semiconductor device, determining a semi-isolated metal line in the provided layout and shifting at least a portion of the determined semi-isolated metal line.

公开(公告)号：US09898572B2

公开(公告)日：2018-02-20

申请号：US15045466

申请日：2016-02-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Thomas Melde ,  Matthias U. Lehr ,  Thomas Herrmann ,  Jens Hassmann ,  Moritz Andreas Meyer ,  Rakesh Kumar Kuncha

IPC: G06F17/50

CPC classification number: G06F17/5077

Abstract: A method of Back-End-Of-Line processing of a semiconductor device is provided including providing a layout for metal lines of a metallization layer of the semiconductor device, determining a semi-isolated metal line in the provided layout and shifting at least a portion of the determined semi-isolated metal line.

公开(公告)号：US20160154922A1

公开(公告)日：2016-06-02

申请号：US14556711

申请日：2014-12-01

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Rakesh Kumar Kuncha ,  Aravind Narayana Samy

IPC: G06F17/50 ,  G03F1/36

CPC classification number: G03F1/36 ,  G03F1/70 ,  G03F7/70441 ,  G03F7/705 ,  G03F7/70641

Abstract: A method of manufacturing semiconductor devices employing optical proximity correction (OPC) is provided including providing a design layout of masks, performing OPC on the design layout to obtain a post OPC layout, performing post chemical mechanical polishing (CMP) topography simulations of a wafer to obtain the surface topography of the wafer, calculating a focus shift of a nominal focus caused by the surface topography of the wafer to obtain a shifted nominal focus, determining a process window based on the shifted nominal focus, simulating a nominal image based on the post OPC layout and the shifted nominal focus and process window images based on the post OPC layout and the process window, and identifying hotspots based on the simulated nominal and process window images.

Abstract translation: 提供一种制造采用光学邻近校正（OPC）的半导体器件的方法，包括提供掩模的设计布局，在设计布局上执行OPC以获得后OPC布局，执行晶片的后化学机械抛光（CMP）形貌模拟 获得晶片的表面形貌，计算由晶片的表面形貌引起的标称焦点的聚焦偏移以获得移动的标称焦点，基于偏移的标称焦点确定处理窗口，基于该信息模拟标称图像 OPC布局和基于OPC后布局和过程窗口的移动的标称焦点和过程窗口图像，以及基于模拟的名义和过程窗口图像来识别热点。