Abstract:
Disclosed are embodiments of a method that provides for pre-production run development of a fail signature database, which stores fail signatures for systematic defects and corresponding root causes. The fail signatures in the database is subsequently accessed and used for a variety of purposes. For example, the fail signatures are evaluated and, based on the results of the evaluation, actions are taken to prevent specific systematic defects from occurring during production runs and/or to allow for early detection of specific systematic defects during production runs. In some embodiments, following production runs, new fail signatures from failing production chips are developed and compared against the fail signatures in the fail signature database. In some embodiments, when a signature match indicates that a particular production chip has a same systematic defect with a same root cause as a particular prototype chip in-line advanced process control (APC) is performed.
Abstract:
A method and apparatus for selecting Si wafer WP based on individual or multiple DFM decks for Si-feed-forward and Si-feed-back analysis are provided. Embodiments include generating markers for a wafer from an individual DFM deck; generating UCF Indexes; determining whether a representative marker corresponding to a UCF is a candidate for WP prediction; extracting markers corresponding to that UCF-Index (UEF data) from a candidate; performing a UCF-Index-based sampling on the extracted UEF data set if a number of markers in the extracted UEF data set is larger than an inspection requirement; adding a location of each marker or group of markers in the extracted UEF data set to a sitelist after the UCF-Index-based sampling; sending the sitelist to a foundry for metrology analysis on sitelist locations; and adding the sitelist locations and corresponding UCF Index and metrology parameters to a design analysis database for analyzing other wafers/UCF Indexes.
Abstract:
A method of Back-End-Of-Line processing of a semiconductor device is provided including providing a layout for metal lines of a metallization layer of the semiconductor device, determining a semi-isolated metal line in the provided layout and shifting at least a portion of the determined semi-isolated metal line.
Abstract:
A method of Back-End-Of-Line processing of a semiconductor device is provided including providing a layout for metal lines of a metallization layer of the semiconductor device, determining a semi-isolated metal line in the provided layout and shifting at least a portion of the determined semi-isolated metal line.
Abstract:
Disclosed are embodiments of a method that provides for pre-production run development of a fail signature database, which stores fail signatures for systematic defects and corresponding root causes. The fail signatures in the database is subsequently accessed and used for a variety of purposes. For example, the fail signatures are evaluated and, based on the results of the evaluation, actions are taken to prevent specific systematic defects from occurring during production runs and/or to allow for early detection of specific systematic defects during production runs. In some embodiments, following production runs, new fail signatures from failing production chips are developed and compared against the fail signatures in the fail signature database. In some embodiments, when a signature match indicates that a particular production chip has a same systematic defect with a same root cause as a particular prototype chip in-line advanced process control (APC) is performed.
Abstract:
A method of manufacturing a semiconductor device, comprising providing design data, producing lithography masks based on the design data, predicting a product process window and producing a wafer including semiconductor structures by means of the lithography masks and observing conditions defined by the product process window.