公开(公告)号：US20170235867A1

公开(公告)日：2017-08-17

申请号：US15045466

申请日：2016-02-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Thomas Melde ,  Matthias U. Lehr ,  Thomas Herrmann ,  Jens Hassmann ,  Moritz Andreas Meyer ,  Rakesh Kumar Kuncha

IPC: G06F17/50

CPC classification number: G06F17/5077

Abstract: A method of Back-End-Of-Line processing of a semiconductor device is provided including providing a layout for metal lines of a metallization layer of the semiconductor device, determining a semi-isolated metal line in the provided layout and shifting at least a portion of the determined semi-isolated metal line.

公开(公告)号：US09898572B2

公开(公告)日：2018-02-20

申请号：US15045466

申请日：2016-02-17

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Thomas Melde ,  Matthias U. Lehr ,  Thomas Herrmann ,  Jens Hassmann ,  Moritz Andreas Meyer ,  Rakesh Kumar Kuncha

IPC: G06F17/50

CPC classification number: G06F17/5077

Abstract: A method of Back-End-Of-Line processing of a semiconductor device is provided including providing a layout for metal lines of a metallization layer of the semiconductor device, determining a semi-isolated metal line in the provided layout and shifting at least a portion of the determined semi-isolated metal line.

公开(公告)号：US09281252B1

公开(公告)日：2016-03-08

申请号：US14523217

申请日：2014-10-24

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Alexander Würfel ,  Moritz Andreas Meyer

IPC: H01L21/76 ,  H01L21/66 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687 ,  C23C16/52 ,  C23C16/50

CPC classification number: H01L22/20 ,  C23C16/44 ,  C23C16/4586 ,  C23C16/52 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/3105 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/67288 ,  H01L21/6831 ,  H01L22/12

Abstract: A method includes providing a semiconductor structure. An external mechanical stress is applied to the semiconductor structure. One or more semiconductor manufacturing processes are performed while the external mechanical stress is applied to the semiconductor structure. The one or more semiconductor manufacturing processes provide one or more material layers having an intrinsic stress at the semiconductor structure. After performing the one or more semiconductor manufacturing processes, the external mechanical stress is removed from the semiconductor structure. The removal of the external mechanical stress at least partially relaxes the intrinsic stress of the one or more material layers.

Abstract translation: 一种方法包括提供半导体结构。 对半导体结构施加外部机械应力。 当外部机械应力施加到半导体结构时，执行一个或多个半导体制造工艺。 一个或多个半导体制造工艺提供在半导体结构处具有固有应力的一个或多个材料层。 在执行一个或多个半导体制造工艺之后，从半导体结构去除外部机械应力。 去除外部机械应力至少部分地松弛一个或多个材料层的固有应力。