公开(公告)号：US20180090516A1

公开(公告)日：2018-03-29

申请号：US15817362

申请日：2017-11-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yun Y. Wang ,  Oh-Jung Kwon ,  Stephen G. Fugardi ,  Sean M. Dillon

IPC: H01L27/12 ,  H01L49/02 ,  H01L21/285 ,  H01L27/108

CPC classification number: H01L27/1207 ,  H01L21/28512 ,  H01L27/10829 ,  H01L27/10861 ,  H01L28/60 ,  H01L28/75

Abstract: The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.

公开(公告)号：US20180026137A1

公开(公告)日：2018-01-25

申请号：US15457017

申请日：2017-03-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Henry K. Utomo ,  Reinaldo A. Vega ,  Yun Y. Wang

IPC: H01L29/78

CPC classification number: H01L29/7851 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7847 ,  H01L29/7849 ,  H01L29/785

Abstract: Device structures for a fin-type field-effect transistor (FinFET) and methods for fabricating a device structure for a FinFET. A fin comprised of a semiconductor material having a first crystal structure is formed. A dielectric layer is formed that includes an opening aligned with the fin. A dummy gate structure is removed from the opening in the dielectric layer. After the dummy gate structure is removed, a section of the fin aligned with the opening is implanted with non-dopant ions to amorphize the first crystal structure of the semiconductor material of the fin. After the section of the fin is implanted, the section of the fin is annealed such that the semiconductor material in the section of the fin recrystallizes with a second crystal structure incorporating internal strain.

公开(公告)号：US09853055B2

公开(公告)日：2017-12-26

申请号：US15084807

申请日：2016-03-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yun Y. Wang ,  Oh-Jung Kwon ,  Stephen G. Fugardi ,  Sean M. Dillon

IPC: H01L27/12 ,  H01L49/02 ,  H01L27/108 ,  H01L21/285

CPC classification number: H01L27/1207 ,  H01L21/28512 ,  H01L27/10829 ,  H01L27/10861 ,  H01L28/60

Abstract: The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.

公开(公告)号：US20170287942A1

公开(公告)日：2017-10-05

申请号：US15084807

申请日：2016-03-30

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yun Y. Wang ,  Oh-Jung Kwon ,  Stephen G. Fugardi ,  Sean M. Dillon

IPC: H01L27/12 ,  H01L27/108 ,  H01L21/285 ,  H01L49/02

CPC classification number: H01L27/1207 ,  H01L21/28512 ,  H01L27/10829 ,  H01L27/10861 ,  H01L28/60

Abstract: The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.

公开(公告)号：US10192887B2

公开(公告)日：2019-01-29

申请号：US15817362

申请日：2017-11-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yun Y. Wang ,  Oh-Jung Kwon ,  Stephen G. Fugardi ,  Sean M. Dillon

IPC: H01L27/108 ,  H01L27/12 ,  H01L49/02 ,  H01L21/285

Abstract: The migration of dislocations into pristine single crystal material during crystal growth of an adjacent conductive strap is inhibited by a conductive barrier formed at the interface between the layers. The conductive barrier may be formed by implanting carbon impurities or depositing Si:C layer that inhibits dislocation movement across the barrier layer, or by forming a passivation layer by annealing in vacuum prior to deposition of amorphous Si to prevent polycrystalline nucleation at the surface of single crystalline Si, or by implanting nucleation promoting species to enhance the nucleation of polycrystalline Si away from single crystalline Si.

公开(公告)号：US09905694B2

公开(公告)日：2018-02-27

申请号：US15457017

申请日：2017-03-13

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Henry K. Utomo ,  Reinaldo A. Vega ,  Yun Y. Wang

IPC: H01L29/78

CPC classification number: H01L29/7851 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7847 ,  H01L29/7849 ,  H01L29/785

Abstract: Device structures for a fin-type field-effect transistor (FinFET) and methods for fabricating a device structure for a FinFET. A fin comprised of a semiconductor material having a first crystal structure is formed. A dielectric layer is formed that includes an opening aligned with the fin. A dummy gate structure is removed from the opening in the dielectric layer. After the dummy gate structure is removed, a section of the fin aligned with the opening is implanted with non-dopant ions to amorphize the first crystal structure of the semiconductor material of the fin. After the section of the fin is implanted, the section of the fin is annealed such that the semiconductor material in the section of the fin recrystallizes with a second crystal structure incorporating internal strain.

公开(公告)号：US09680019B1

公开(公告)日：2017-06-13

申请号：US15214854

申请日：2016-07-20

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Henry K. Utomo ,  Reinaldo A. Vega ,  Yun Y. Wang

IPC: H01L29/78 ,  H01L21/02

CPC classification number: H01L29/7851 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7847 ,  H01L29/7849 ,  H01L29/785

Abstract: Device structures for a fin-type field-effect transistor (FinFET) and methods for fabricating a device structure for a FinFET. A fin comprised of a semiconductor material having a first crystal structure is formed. A dielectric layer is formed that includes an opening aligned with the fin. A dummy gate structure is removed from the opening in the dielectric layer. After the dummy gate structure is removed, a section of the fin aligned with the opening is implanted with non-dopant ions to amorphize the first crystal structure of the semiconductor material of the fin. After the section of the fin is implanted, the section of the fin is annealed such that the semiconductor material in the section of the fin recrystallizes with a second crystal structure incorporating internal strain.