公开(公告)号：US10978566B2

公开(公告)日：2021-04-13

申请号：US16742981

申请日：2020-01-15

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Hui Zang ,  Guowei Xu ,  Keith Tabakman ,  Viraj Sardesai

IPC: H01L29/66 ,  H01L29/417 ,  H01L21/28 ,  H01L21/311 ,  H01L21/768 ,  H01L27/088 ,  H01L21/8234

Abstract: The present disclosure generally relates to semiconductor structures and, more particularly, to middle of line structures and methods of manufacture. The structure includes: a plurality of gate structures comprising source and/or drain metallization features; spacers on sidewalls of the gate structures and composed of a first material and a second material; and contacts in electrical contact with the source and/or drain metallization features, and separated from the gate structures by the spacers.

公开(公告)号：US10923469B2

公开(公告)日：2021-02-16

申请号：US16244169

申请日：2019-01-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Hui Zang ,  Guowei Xu ,  Jiehui Shu ,  Ruilong Xie ,  Yurong Wen ,  Garo J. Derderian ,  Shesh M. Pandey ,  Laertis Economikos

IPC: H01L27/06 ,  H01L29/66 ,  H01L49/02 ,  H01L21/762 ,  H01L23/522 ,  H01L29/40 ,  H01L29/78

Abstract: An integrated circuit (IC) includes an active area including at least one active fin-type field effect transistor (FinFET), and a trench isolation adjacent to the active area. At least one inactive gate is positioned over the trench isolation. A vertically extending resistor body is positioned adjacent the at least one inactive gate over the trench isolation. A lower end of the resistor is below an upper surface of the trench isolation. The resistor reduces interconnect layer thickness to improve yield, and significantly reduces resistor footprint to enable scaling.