公开(公告)号：US20250079345A1

公开(公告)日：2025-03-06

申请号：US18242906

申请日：2023-09-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ian McCallum-Cook ,  Mark Levy ,  Zhong-Xiang He

IPC: H01L23/58 ,  H01L23/31

Abstract: Structures including a wide band-gap semiconductor layer stack and methods of forming such structures. The structure comprises a layer stack on a substrate and a first dielectric layer on the layer stack. The layer stack includes semiconductor layers that comprise a wide band-gap semiconductor material. A seal ring includes a trench that penetrates through the first dielectric layer and the layer stack to the substrate, a second dielectric layer that lines the trench, and a conductor layer including first and second portions inside the trench. The trench surrounds portions of the layer stack and the first dielectric layer. The second dielectric layer includes a first portion disposed between the first portion of the conductor layer and the portion of the layer stack, and the second dielectric layer includes a second portion disposed between the second portion of the conductor layer and the portion of the first dielectric layer.

公开(公告)号：US20210111063A1

公开(公告)日：2021-04-15

申请号：US16598064

申请日：2019-10-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Steven M. Shank ,  Anthony K. Stamper ,  Siva P. Adusumilli ,  Ian McCallum-Cook ,  Michel J. Abou-Khalil

IPC: H01L21/763 ,  H01L29/06 ,  H01L23/66 ,  H01L21/265 ,  H01L21/324

Abstract: Semiconductor structures including electrical isolation and methods of forming a semiconductor structure including electrical isolation. Shallow trench isolation regions extend from a top surface of a semiconductor substrate into the semiconductor substrate. The semiconductor substrate contains single-crystal semiconductor material, and the shallow trench isolation regions are positioned to surround an active device region of the semiconductor substrate. A polycrystalline layer is formed in the semiconductor substrate. The polycrystalline layer has a first section beneath the active device region and a second section beneath the plurality of shallow trench isolation regions. The first section of the polycrystalline layer is located at a different depth relative to the top surface of the semiconductor substrate than the second section of the polycrystalline layer.

公开(公告)号：US20230063731A1

公开(公告)日：2023-03-02

申请号：US17983436

申请日：2022-11-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： Steven M. Shank ,  Anthony K. Stamper ,  Ian McCallum-Cook ,  Siva P. Adusumilli

IPC: H01L21/763 ,  H01L29/06 ,  H01L27/12 ,  H01L21/762 ,  H01L21/324 ,  H01L21/84 ,  H01L21/265 ,  H01L21/74 ,  H01L29/32

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region.

公开(公告)号：US11158535B2

公开(公告)日：2021-10-26

申请号：US16598064

申请日：2019-10-10

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Steven M. Shank ,  Anthony K. Stamper ,  Siva P. Adusumilli ,  Ian McCallum-Cook ,  Michel J. Abou-Khalil

IPC: H01L29/04 ,  H01L29/32 ,  H01L21/265 ,  H01L21/763 ,  H01L29/06 ,  H01L21/324 ,  H01L21/762 ,  H01L29/36 ,  H01L29/10

Abstract: Semiconductor structures including electrical isolation and methods of forming a semiconductor structure including electrical isolation. Shallow trench isolation regions extend from a top surface of a semiconductor substrate into the semiconductor substrate. The semiconductor substrate contains single-crystal semiconductor material, and the shallow trench isolation regions are positioned to surround an active device region of the semiconductor substrate. A polycrystalline layer is formed in the semiconductor substrate. The polycrystalline layer has a first section beneath the active device region and a second section beneath the plurality of shallow trench isolation regions. The first section of the polycrystalline layer is located at a different depth relative to the top surface of the semiconductor substrate than the second section of the polycrystalline layer.

公开(公告)号：US11749559B2

公开(公告)日：2023-09-05

申请号：US17983436

申请日：2022-11-09

Applicant: GlobalFoundries U.S. Inc.

Inventor： Steven M. Shank ,  Anthony K. Stamper ,  Ian McCallum-Cook ,  Siva P. Adusumilli

IPC: H01L21/763 ,  H01L29/06 ,  H01L27/12 ,  H01L21/762 ,  H01L21/324 ,  H01L21/84 ,  H01L21/265 ,  H01L21/74 ,  H01L29/32 ,  H01L21/02 ,  H01L27/06 ,  H01L29/10

CPC classification number: H01L21/763 ,  H01L21/26506 ,  H01L21/26526 ,  H01L21/26533 ,  H01L21/324 ,  H01L21/743 ,  H01L21/76267 ,  H01L21/76283 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/32 ,  H01L21/0217 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02271 ,  H01L27/0629 ,  H01L29/1087

Abstract: Structures with altered crystallinity beneath semiconductor devices and methods associated with forming such structures. Trench isolation regions surround an active device region composed of a single-crystal semiconductor material. A first non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. A second non-single-crystal layer is arranged beneath the trench isolation regions and the active device region. The first non-single-crystal layer is arranged between the second non-single-crystal layer and the active device region.