摘要:
The invention relates to a lithography system for processing a target, such as a wafer. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system connected to the final projection system and arranged for detecting a position mark on a surface.
摘要:
The invention relates to a lithography system for processing a target, wherein the lithography system comprises a final projection system arranged for projecting a pattern on the target surface. The lithography system comprises a mark position detection system arranged for detecting a position of a position mark on the target surface. The mark position detection system comprises an optical element arranged for projecting a light beam on the target surface and a light detector arranged for detecting a reflected light beam. The optical element may be positioned adjacent to the final projection system and the light detector may be positioned inside a frame.
摘要:
The invention relates to a lithography system for processing a target, such as a wafer. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system connected to the final projection system and arranged for detecting a position mark on a surface.
摘要:
The invention relates to a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system arranged for detecting a position mark on a surface.
摘要:
The invention relates to a lithography system for processing a target, such as a wafer and a substrate for use in such a lithography system. The lithography system comprises a beam source arranged for providing a patterning beam, a final projection system arranged for projecting a pattern on the target surface, a chuck arranged for supporting the target and a mark position system arranged for detecting a position mark on a surface.
摘要:
The invention relates to a lithography system for processing a target, wherein the lithography system comprises a final projection system arranged for projecting a pattern on the target surface. The lithography system comprises a mark position detection system arranged for detecting a position of a position mark on the target surface. The mark position detection system comprises an optical element arranged for projecting a light beam on the target surface and a light detector arranged for detecting a reflected light beam. The optical element may be positioned adjacent to the final projection system and the light detector may be positioned inside a frame.
摘要:
A measurement system for measuring an input electrical current (Ics) from a current source (CS) and generating a current measurement signal, comprising a current measuring circuit (70) having a first input terminal (72) connected to the current source and an output terminal (74) for providing the current measurement signal. The current measuring circuit further comprises one or more power supply terminals (75, 76) arranged to receive one or more voltages from a power supply (77a, 77b) for powering the current measuring circuit. The current measuring circuit also comprises a first voltage source (VD) coupled to the one or more power supply terminals, the first voltage source providing a disturbance voltage to the one or more power supply terminals, the disturbance voltage representing a voltage at the first input terminal.
摘要:
A capacitive measurement system for generating a measurement signal representative of a measured position or distance to a target. The system has a first circuit comprising a thin film capacitive sensor (1a) arranged for providing a sensor capacitance in dependence on the measured position or distance; a cable (30a) comprising a sensor wire (31a) and a co-axial shield conductor (32a), the cable having a remote end and a local end, the sensor wire electrically connected to the capacitive sensor at the local end of the cable; a voltage source (24a) having an output terminal connected to the sensor wire at the remote end of the cable and arranged to energize the capacitive sensor, and energize the shield conductor with essentially the same voltage as the sensor wire; and a current measuring circuit (21a) having first and second input terminals and an output terminal, the current measuring circuit connected in series with the first input terminal connected to the output terminal of the voltage source and the second input terminal connected to the sensor wire at the remote end of the cable, the current measuring circuit arranged to measure current flowing in the sensor wire and generate the measurement signal at the output terminal.