公开(公告)号：US20140319637A1

公开(公告)日：2014-10-30

申请号：US14259509

申请日：2014-04-23

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi NAKAJIMA ,  Minoru NIIGAKI ,  Toru HIROHATA ,  Hiroyuki YAMASHITA ,  Wataru AKAHORI

IPC: H01L31/0232

CPC classification number: H01L31/0232 ,  H01L31/02327 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/09

Abstract: A photodetector 1A comprises an optical element 10A for generating an electric field component in a predetermined direction when light is incident thereon along the predetermined direction, the optical element 10A having a structure including first regions and second regions periodically arranged with respect to the first regions along a plane perpendicular to the predetermined direction; and a semiconductor layer 40, arranged on the other side opposite from one side in the predetermined direction with respect to the optical element 10A, having a semiconductor multilayer body 42 for generating a current according to the electric field component; each end part on the other side of the second regions being located closer to the other side than is each end part on the other side of the first regions; each first region being made of a dielectric body having a refractive index greater than that of each second region.

Abstract translation: 光电检测器1A包括光学元件10A，用于沿着预定方向入射到其上时沿预定方向产生预定方向的电场分量，光学元件10A具有包括第一区域和第二区域的结构，该第一区域和第二区域相对于第一区域周期性地布置 垂直于预定方向的平面; 以及半导体层40，其配置在相对于光学元件10A的与预定方向相对的另一侧上，具有用于根据电场分量产生电流的半导体多层体42; 第二区域的另一侧的每个端部位于比第一区域的另一侧的每个端部更靠近另一侧的位置; 每个第一区域由折射率大于每个第二区域的折射率的电介质体制成。

公开(公告)号：US20130320470A1

公开(公告)日：2013-12-05

申请号：US13899940

申请日：2013-05-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi NAKAJIMA ,  Toru HIROHATA ,  Minoru NIIGAKI ,  Wataru AKAHORI ,  Kazuue FUJITA

IPC: H01L31/0352

CPC classification number: H01L31/0352 ,  B82Y20/00 ,  H01L27/1446 ,  H01L27/14649 ,  H01L31/035236 ,  H01L31/09

Abstract: A photodetector 1A comprises a multilayer structure 3 having a first layer 4 constituted by first metal or first semiconductor, a semiconductor structure layer 5 mounted on the first layer 4 and adapted to excite an electron by plasmon resonance, and a second layer 6 mounted on the semiconductor structure layer 5 and constituted by second metal or second semiconductor.

Abstract translation: 光电检测器1A包括具有由第一金属或第一半导体构成的第一层4的多层结构3，安装在第一层4上并适于通过等离子体共振激发电子的半导体结构层5和安装在第一层上的第二层6 半导体结构层5，由第二金属或第二半导体构成。