Abstract:
A semiconductor inspection device includes: a measuring device that supplies power to a semiconductor device and measures the electrical characteristics; an optical scanning device that scans the semiconductor device with light intensity-modulated with a plurality of frequencies; a lock-in amplifier that acquires a characteristic signal indicating the electrical characteristics of the plurality of frequency components; and an inspection device that calculates a frequency at which the characteristic signal reflecting the electrical characteristics of a first layer and the characteristic signal reflecting the electrical characteristics of a second layer have a predetermined phase difference, corrects a phase component of the characteristic signal at an arbitrary scanning position with a phase component at the scanning position reflecting the electrical characteristics of the first layer as a reference, and outputs an in-phase component and a quadrature component at the arbitrary scanning position at the calculated frequency.
Abstract:
An optical measurement device inputs excitation light to an integrating sphere in which a sample is disposed, irradiates the sample with the excitation light having a predetermined beam cross-section, detects measurement light output from the integrating sphere by a photodetector, and acquires intensity data of the sample. The optical measurement device includes a storage unit in which correction data is stored and an optical characteristic calculation unit for calculating optical characteristics of the sample based on the intensity data of the sample and the correction data. The correction data is calculated based on first corrective intensity data and second corrective intensity data. The predetermined beam cross-section is covered with the first light absorbing member and covers the second light absorbing member.
Abstract:
An ultrasonic testing device having a packaged semiconductor device as a testing target, the device including: an ultrasonic oscillator disposed to face the semiconductor device; a pulse generator generating a driving signal that is used in the generation of an ultrasonic wave to be output from the ultrasonic oscillator; and an analysis unit analyzing an output signal that is output from the semiconductor device in accordance with the irradiation of the ultrasonic wave from the ultrasonic oscillator, in which the pulse generator sets an optimal frequency of the driving signal such that the absorption of the ultrasonic wave in the semiconductor device is maximized.
Abstract:
An orientation characteristic measurement system (1) includes an irradiation optical system (5), a detection optical system (11), a light detector (13), a rotation mechanism (9) changing an angle (ϕ) between a surface of the sample and an optical axis (L2) of the detection optical system (11), and a computer (15), and the computer (15) includes a rotation mechanism control unit (32) controlling the rotation mechanism (9), a distribution acquisition unit (34) normalizing an angle-dependent distribution of light intensity to acquire an angle-dependent distribution of light intensity, an area specifying unit (35) specifying light intensity in a maximum area on the basis of the angle-dependent distribution of the light intensity, and a parameter calculation unit (36) calculating the orientation parameter (S) on the basis of a linear relationship determined using the film thickness and refractive index of the sample and the light intensity in the maximum area.
Abstract:
In a spectrometry device, a control unit controls a light source so that input of excitation light to an internal space is maintained in a first period, and that the input of the excitation light to the internal space is stopped in a second period, and the analysis unit calculates the photoluminescence quantum yield of a long afterglow emission material on the basis of the number of absorbed photons of the long afterglow emission material obtained on the basis of excitation light spectral data in the first period and the number of light emission photons of the long afterglow emission material obtained on the basis of light emission spectral data in any of the first period, the second period, and a total period of the first period and the second period.
Abstract:
A spectrometry device includes a light source, an integrator configured to have an internal space in which a long afterglow emission material is disposed and output detection light from the internal space, a spectroscopic detector, an analysis unit configured to analyze a photoluminescence quantum yield of the long afterglow emission material, and a control unit configured to control switching between presence and absence of input of excitation light to the internal space and an exposure time in the spectroscopic detector. The control unit controls the light source so that the input of the excitation light to the internal space is maintained in a first period and the input of the excitation light to the internal space is stopped in a second period, and controls the spectroscopic detector so that an exposure time in the second period becomes longer than an exposure time in the first period.
Abstract:
A spectrometry device includes: an integrating sphere which includes an inner wall surface and an attachment hole; an adapter which includes a guide hole guiding the measurement target light and is disposed in the integrating sphere; a plate which includes a first surface covering the guide hole from the outside of the integrating sphere and allowing a sample to be mounted thereon and a second surface and through which the measurement target light is transmitted; a holder which includes a concave portion mounting the plate thereon and is attached to the attachment hole; and a spectral detector configured to detect the measurement target light. The concave portion includes a bottom surface facing the second surface and a side surface surrounding the periphery of the plate. The bottom surface and the side surface are coated with a reflective material reflecting the measurement target light.
Abstract:
An orientation characteristic measurement system (1) includes an irradiation optical system (5), a detection optical system (11), a light detector (13), a rotation mechanism (9) changing an angle (4) between a surface of the sample and an optical axis (L2) of the detection optical system (11), and a computer (15), and the computer (15) includes a rotation mechanism control unit (32) controlling the rotation mechanism (9), a distribution acquisition unit (34) normalizing an angle-dependent distribution of light intensity to acquire an angle-dependent distribution of light intensity, an area specifying unit (35) specifying light intensity in a maximum area on the basis of the angle-dependent distribution of the light intensity, and a parameter calculation unit (36) calculating the orientation parameter (S) on the basis of a linear relationship determined using the film thickness and refractive index of the sample and the light intensity in the maximum area.
Abstract:
A spectral measurement apparatus includes a light source for generating a excitation light; an integrator having an input opening portion and an output opening portion; a housing portion arranged in the integrator and for housing a sample; an incidence optical system for making the excitation light incident to the sample; a photodetector for detecting a light to be measured output from the output opening portion; and an analysis means for calculating a light absorptance of the sample, based on a detection value detected by the photodetector, and an irradiation area with the excitation light at a position of incidence to the sample is set larger than an irradiated area of the sample, and the analysis means performs an area ratio correction regarding the irradiation area with the excitation light and the irradiated area of the sample, with respect to the light absorptance calculated.
Abstract:
A spectral measurement apparatus for irradiating a sample as a measurement object with excitation light and detecting light to be measured includes a light source generating the excitation light; an integrator having an input opening portion through which the excitation light is input, and an output opening portion from which the light to be measured is output; a housing portion arranged in the integrator and housing the sample; an incidence optical system making the excitation light incident to the sample; a photodetector detecting the light to be measured output from the output opening portion; and an analysis device calculating a quantum yield of the sample, based on a detection value detected by the photodetector, and the excitation light is applied to the sample so as to include the sample.