Set-reset latches
    2.
    发明授权

    公开(公告)号:US10075150B2

    公开(公告)日:2018-09-11

    申请号:US15227326

    申请日:2016-08-03

    CPC classification number: H03K3/356121 H03K3/356113

    Abstract: Examples disclosed herein relate to set-reset (SR) latch circuits and methods for manufacturing the same. In some of the disclosed examples, a SR latch circuit includes an inverter storage loop for storing state information and a set of p-channel field-effect transistors (PFETs) for control circuitry. The PFETs may include first and second PFETs connected to a first node of the inverter storage loop, and third and fourth PFETs connected to a second node of the inverter storage loop. Gate terminals of the first and fourth PFETs may be connected to a first control input, and gate terminals of the second and third PFETs may be connected to a second control input.

    Set-reset latches
    3.
    发明授权

    公开(公告)号:US11201607B2

    公开(公告)日:2021-12-14

    申请号:US16121570

    申请日:2018-09-04

    Abstract: Examples disclosed herein relate to set-reset (SR) latch circuits and methods for manufacturing the same. In some of the disclosed examples, a SR latch circuit includes an inverter storage loop for storing state information and a set of p-channel field-effect transistors (PFETs) for control circuitry. The PFETs may include first and second PFETs connected to a first node of the inverter storage loop, and third and fourth PFETs connected to a second node of the inverter storage loop. Gate terminals of the first and fourth PFETs may be connected to a first control input, and gate terminals of the second and third PFETs may be connected to a second control input.

    SET-RESET LATCHES
    4.
    发明申请
    SET-RESET LATCHES 审中-公开

    公开(公告)号:US20180375501A1

    公开(公告)日:2018-12-27

    申请号:US16121570

    申请日:2018-09-04

    Abstract: Examples disclosed herein relate to set-reset (SR) latch circuits and methods for manufacturing the same. In some of the disclosed examples, a SR latch circuit includes an inverter storage loop for storing state information and a set of p-channel field-effect transistors (PFETs) for control circuitry. The PFETs may include first and second PFETs connected to a first node of the inverter storage loop, and third and fourth PFETs connected to a second node of the inverter storage loop. Gate terminals of the first and fourth PFETs may be connected to a first control input, and gate terminals of the second and third PFETs may be connected to a second control input.

    Delayed boost of driver output signals

    公开(公告)号:US10270444B1

    公开(公告)日:2019-04-23

    申请号:US15945471

    申请日:2018-04-04

    Abstract: According to examples, an apparatus may include a field effect transistor (FET), a driver to receive an input signal and to output a driver output signal, and a gate to receive the input signal. The apparatus may also include a delay element to receive the driver output signal and to output a delayed signal to the gate after a delay from receipt of the driver output signal, in which the gate is to output a gate output signal to the FET in response to receipt of the input signal and the delayed signal, and in which receipt of the gate output signal by the FET drives the FET to provide a boost to the driver output signal.

    SET-RESET LATCHES
    7.
    发明申请
    SET-RESET LATCHES 审中-公开

    公开(公告)号:US20180041199A1

    公开(公告)日:2018-02-08

    申请号:US15227326

    申请日:2016-08-03

    CPC classification number: H03K3/356121 H03K3/356113

    Abstract: Examples disclosed herein relate to set-reset (SR) latch circuits and methods for manufacturing the same. In some of the disclosed examples, a SR latch circuit includes an inverter storage loop for storing state information and a set of p-channel field-effect transistors (PFETs) for control circuitry. The PFETs may include first and second PFETs connected to a first node of the inverter storage loop, and third and fourth PFETs connected to a second node of the inverter storage loop. Gate terminals of the first and fourth PFETs may be connected to a first control input, and gate terminals of the second and third PFETs may be connected to a second control input.

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