公开(公告)号：US09916098B2

公开(公告)日：2018-03-13

申请号：US15114098

申请日：2014-01-31

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Raphael Gay ,  Siamak Tavallaei

IPC: G06F12/08 ,  G06F3/06 ,  G06F13/16 ,  G06F12/0802 ,  G06F12/02 ,  G06F12/06

CPC classification number: G06F3/0611 ,  G06F3/0659 ,  G06F3/0673 ,  G06F12/0238 ,  G06F12/0638 ,  G06F12/0802 ,  G06F13/1689 ,  G06F2212/1024 ,  G06F2212/205 ,  G06F2212/60

Abstract: Example implementations relate to using an alternative memory (AltMem) to reduce read latency of a memory module having a dynamic random-access memory (DRAM). In example implementations, write data may be written to the DRAM and to the AltMem. A read command may be issued to the AltMem if a DRAM read latency time for executing the read command is greater than an AltMem read latency time for executing the read command. Data read from the AltMem in response to the read command may be received.