公开(公告)号：US20180233329A1

公开(公告)日：2018-08-16

申请号：US15951814

申请日：2018-04-12

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Naoyuki KOFUJI ,  Ken'etsu YOKOGAWA ,  Nobuyuki NEGISHI ,  Masami KAMIBAYASHI ,  Masatoshi MIYAKE

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/3341

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.

公开(公告)号：US20170084430A1

公开(公告)日：2017-03-23

申请号：US15370486

申请日：2016-12-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Naoyuki KOFUJI ,  Ken'etsu YOKOGAWA ,  Nobuyuki NEGISHI ,  Masami KAMIBAYASHI ,  Masatoshi MIYAKE

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/3341

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.