公开(公告)号：US20180233329A1

公开(公告)日：2018-08-16

申请号：US15951814

申请日：2018-04-12

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Naoyuki KOFUJI ,  Ken'etsu YOKOGAWA ,  Nobuyuki NEGISHI ,  Masami KAMIBAYASHI ,  Masatoshi MIYAKE

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/3341

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.

公开(公告)号：US20170084430A1

公开(公告)日：2017-03-23

申请号：US15370486

申请日：2016-12-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Naoyuki KOFUJI ,  Ken'etsu YOKOGAWA ,  Nobuyuki NEGISHI ,  Masami KAMIBAYASHI ,  Masatoshi MIYAKE

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/3341

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.

公开(公告)号：US20140202995A1

公开(公告)日：2014-07-24

申请号：US13956492

申请日：2013-08-01

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masatoshi MIYAKE ,  Ken'etsu YOKOGAWA ,  Takashi UEMURA ,  Hiromichi KAWASAKI

IPC: H01L21/324 ,  H01J37/32

CPC classification number: H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01L21/324 ,  H01L29/1608

Abstract: A plasma heat treatment apparatus, provided for enabling a control of temperature distribution within electrode surfaces, without accompanying an increase of an electric power to be inputted therein, even in case when heating is made on a sample to be heated, having a large diameter thereof, with applying plasma, comprises a treatment chamber 100 for heat the sample 101 to be treated therein, a first electrode 102, which is disposed within the treatment chamber, a plate-shaped second electrode 103, which is disposed opposing to the first electrode 102, a radio-frequency power supply 111 for supplying radio-frequency electric power to the first electrode 102 or the second electrode 103, and a gas introducing means 113 for supplying a gas within the treatment chamber, wherein the first electrode 102 has an opening portion therein.

Abstract translation: 一种等离子体热处理装置，其特征在于，即使在对具有大直径的加热用样品进行加热的情况下，也可以控制电极表面内的温度分布，而不伴随着输入电力的增加。 在施加等离子体的情况下，包括用于加热待处理样品101的处理室100，设置在处理室内的第一电极102，与第一电极102相对设置的板状第二电极103 用于向第一电极102或第二电极103提供高频电力的射频电源111和用于在处理室内供给气体的气体引入装置113，其中第一电极102具有开口部分 其中。

公开(公告)号：US20140102640A1

公开(公告)日：2014-04-17

申请号：US13953924

申请日：2013-07-30

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Ken'etsu YOKOGAWA ,  Masahito MORI ,  Takao ARASE

IPC: H01L21/02

Abstract: A plasma processing apparatus having a stable plasma generation under wide-ranging process conditions, and superior in uniformity and reproducibility, comprises an upper electrode 3 having gas supply through holes 6, a gas supply means and a lower electrode 1, wherein the gas supply means includes a plane-like member 4 having gas through holes 8 and a plane-like member 5 having gas through holes 10, and the gas supply through holes 6 and the gas through holes 8 are connected through a groove 7, and the gas through holes 8 and the gas through holes 10 are connected through a groove 9, and wherein the gas supply through holes 6, the gas through holes 8 and the gas through holes 10 are disposed at positions, different from each other on a plane.

Abstract translation: 在宽范围的工艺条件下具有稳定的等离子体生成并且均匀性和再现性优异的等离子体处理装置包括具有气体供应通孔6，气体供应装置和下部电极1的上部电极3，其中气体供应装置 包括具有气体通孔8的平面状构件4和具有气体通孔10的平面状构件5，气体供给通孔6和气体通孔8通过槽7连接，气体通孔 8和气体通孔10通过槽9连接，其中气体供应通孔6，气体通孔8和气体通孔10设置在平面上彼此不同的位置。

公开(公告)号：US20140008352A1

公开(公告)日：2014-01-09

申请号：US13928708

申请日：2013-06-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Takashi UEMURA ,  Ken'etsu YOKOGAWA ,  Masatoshi MIYAKE ,  Hiromichi KAWASAKI

IPC: H05B6/02

CPC classification number: H05B6/02 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/3255 ,  H01J37/32724 ,  H05B6/62

Abstract: In order to provide a heat treatment apparatus that is high in thermal efficiency, and can reduce a surface roughness of a specimen surface even when a specimen is heated at 1200° C. or higher, in a heat treatment apparatus that conducts a heat treatment by the aid of plasma, a heat treatment chamber includes a heating plate that heats a specimen by the aid of the plasma, and an electrode that is applied with a plasma generation radio-frequency power. The heating plate includes a beam, and is connected to the heat treatment chamber through the beam and the thermal expansion absorption member, and the thermal expansion absorption member has an elastic member.

Abstract translation: 为了提供一种热效率高的热处理装置，即使在1200℃以上的试样被加热的情况下，也能够降低试样表面的表面粗糙度，在进行热处理的热处理装置中 等离子体的辅助，热处理室包括借助等离子体加热样品的加热板和施加有等离子体产生射频功率的电极。 加热板包括梁，并且通过梁和热膨胀吸收构件连接到热处理室，并且热膨胀吸收构件具有弹性构件。