公开(公告)号：US11766833B2

公开(公告)日：2023-09-26

申请号：US16894862

申请日：2020-06-07

Applicant: Iftikhar Ahmad ,  Keith R. Hicks ,  Andrew Cardin ,  Clayton R. DeCamillis ,  Richard C. Hazelhurst ,  Angelo Luciano ,  Andrew Bools ,  Robert J. Schauer

Inventor： Iftikhar Ahmad ,  Keith R. Hicks ,  Andrew Cardin ,  Clayton R. DeCamillis ,  Richard C. Hazelhurst ,  Angelo Luciano ,  Andrew Bools ,  Robert J. Schauer

IPC: H05B6/64 ,  H05B6/68 ,  B29C65/50 ,  B29C65/14 ,  B29C65/34 ,  H01J37/32

CPC classification number: B29C65/5014 ,  B29C65/1425 ,  B29C65/1438 ,  B29C65/1483 ,  B29C65/3408 ,  H01J37/32229 ,  H01J37/32302 ,  H05B6/64

Abstract: A microwave heating device includes a variable frequency microwave power supply, a waveguide launcher, and a fixture to contain a material to be heated, with the fixture located directly adjacent to the end of the launcher. All heating occurs in the near-field region, i.e., no cavity modes or standing waves are established within the fixture. This condition may be insured by keeping the thickness of the fixture or workpiece under one wavelength (at all microwave frequencies being used). The launcher is preferably a horn configured to spread the microwave power laterally over a selected area while maintaining a single propagating mode. The invention may be used to enhance catalytic reactions for research and other purposes. Alternatively, the invention may be configured to perform spot curing or repair operations involving adhesives and composites.

公开(公告)号：US09860941B2

公开(公告)日：2018-01-02

申请号：US14114422

申请日：2012-04-25

Applicant: Adrien Grandemenge ,  Jean-Marie Jacomino ,  Marilena Radoiu ,  Louis Latrasse

Inventor： Adrien Grandemenge ,  Jean-Marie Jacomino ,  Marilena Radoiu ,  Louis Latrasse

IPC: H05B6/64 ,  H05B6/74 ,  H05B6/66 ,  H01J37/32

CPC classification number: H05B6/6447 ,  H01J37/32009 ,  H01J37/32192 ,  H01J37/32201 ,  H01J37/32229 ,  H01J37/32266 ,  H01J37/32302 ,  H01J37/32311 ,  H01J37/32678 ,  H05B6/664 ,  H05B6/74

Abstract: The invention relates to a facility (1) for microwave treatment of a load, including: at least one application device (30); at least one solid-state generator (4) in the field of microwaves, connected to at least one application device by a means for guiding (5) the electromagnetic wave; at least one frequency adjustment system (40) designed for adjusting the frequency of the wave produced by the corresponding generator (4); a measurement system (31) for the or each application device (30), designed for measuring the power reflected PR(i) by the application device (30); an automated control means (6) connected to each frequency adjustment system (40) and to each measurement system (31) in order to control the adjustment of the frequency f(i) of the electromagnetic wave according to the reflected power, in order to adjust the reflected power PR(i) and/or to adjust the transmitted power PT(i).

公开(公告)号：US20170040145A1

公开(公告)日：2017-02-09

申请号：US15304366

申请日：2015-06-10

Applicant: ELEMENT SIX TECHNOLOGIES LIMITED

Inventor： JOHN ROBERT BRANDON ,  IAN FRIEL ,  MICHAEL ANDREW COOPER ,  GEOFFREY ALAN SCARSBROOK ,  BEN LLEWLYN GREEN

IPC: H01J37/32 ,  C23C16/511 ,  C30B29/04 ,  C30B25/10 ,  C30B25/20 ,  C23C16/27 ,  C23C16/458

CPC classification number: H01J37/32201 ,  C23C16/274 ,  C23C16/458 ,  C23C16/511 ,  C30B25/105 ,  C30B25/205 ,  C30B29/04 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32247 ,  H01J37/32284 ,  H01J37/32293 ,  H01J37/32302 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power Pτ into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power Pτ into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

Abstract translation: 一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室，其限定用于支撑具有初级微波谐振模式频率f的初级微波谐振模式的谐振腔; 耦合到等离子体室的多个微波源，用于产生并馈送具有总微波功率Pτ的微波进入等离子体室; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 以及衬底保持器，其设置在所述等离子体室中并且包括用于支撑在其上沉积所述合成金刚石材料的衬底的支撑表面，其中所述多个微波源被配置为耦合所述总微波功率的至少30％ Pτ以初级微波共振模式频率f进入等离子体室，并且其中多个微波源中的至少一些是固态微波源。

公开(公告)号：US20140148016A1

公开(公告)日：2014-05-29

申请号：US13749784

申请日：2013-01-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Shunsuke Kanazawa ,  Naoki Yasui ,  Michikazu Morimoto ,  Yasuo Ohgoshi

IPC: H01L21/3065

CPC classification number: H01J37/32311 ,  C23F4/00 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32302 ,  H01L21/32137

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.

Abstract translation: 等离子体处理装置包括对样品进行等离子体处理的处理室，向处理室供给用于等离子体生成的第一高频电力的第一高频电源，提供第二高频电源的第二高频电源 放置样品的样品级的功率和产生用于对第一高频功率进行时间调制的第一脉冲的脉冲产生装置和用于对第二高频功率进行时间调制的第二脉冲。 脉冲发生装置包括控制装置，其控制第一和第二脉冲，使得第一脉冲的频率高于第二脉冲的频率，并且第二脉冲的导通周期包含在第一脉冲的导通周期中 。

公开(公告)号：US20130075390A1

公开(公告)日：2013-03-28

申请号：US13627328

申请日：2012-09-26

Applicant: Mitsutoshi ASHIDA

Inventor： Mitsutoshi ASHIDA

IPC: H05B6/66

CPC classification number: H01J37/32302 ,  H01J37/32266

Abstract: A microwave processing apparatus includes a processing chamber which accommodates an object to be processed, and a microwave introducing unit which has at least one microwave source to generate a microwave used to process the object and introduces the microwave into the processing chamber. The microwave processing apparatus further includes a control unit which controls the microwave introducing unit. Furthermore, the control unit changes a frequency of the microwave during a state of processing the object.

Abstract translation: 微波处理装置包括容纳待处理物体的处理室和具有至少一个微波源的微波引入单元，以产生用于处理物体的微波，并将微波导入处理室。 微波处理装置还包括控制微波引入单元的控制单元。 此外，控制单元在处理对象的状态期间改变微波的频率。

公开(公告)号：US20070164680A1

公开(公告)日：2007-07-19

申请号：US11590058

申请日：2006-10-31

Applicant: Satyendra Kumar ,  Devendra Kumar

Inventor： Satyendra Kumar ,  Devendra Kumar

IPC: H01J7/24 ,  C23F1/00 ,  C23C16/00 ,  G21G4/00

CPC classification number: H05B6/68 ,  B01D53/92 ,  B01D2258/01 ,  B01D2259/818 ,  B01J19/088 ,  B01J19/126 ,  B01J2219/00063 ,  B01J2219/00193 ,  B01J2219/002 ,  B01J2219/00213 ,  B01J2219/0024 ,  B01J2219/0892 ,  B01J2219/0894 ,  B01J2219/1269 ,  B82Y10/00 ,  B82Y30/00 ,  C22B4/005 ,  F01N3/202 ,  F01N3/206 ,  F01N13/10 ,  F01N2240/28 ,  F01N2610/08 ,  H01J37/32009 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/32366 ,  H01J2237/0206 ,  H01J2237/33 ,  H01J2237/336 ,  H01J2237/338 ,  H05B6/6402 ,  H05B6/806 ,  H05B2206/044 ,  H05H1/46 ,  H05H2001/4607 ,  H05H2001/4652 ,  Y02B40/143 ,  Y02T10/26

Abstract: Plasma-assisted methods and apparatus that use multiple radiation sources are provided. In one embodiment, a plasma is ignited by subjecting a gas in a radiation cavity to electromagnetic radiation having a frequency less than about 333 GHz in the presence of a plasma catalyst, which may be passive or active. A controller can be used to delay activation of one radiation source with respect to another radiation source.

Abstract translation: 提供了使用多种辐射源的等离子体辅助方法和装置。 在一个实施例中，通过使辐射腔中的气体在等离子体催化剂存在下具有小于约333GHz的频率的电磁辐射来点燃等离子体，等离子体催化剂可能是被动的或有源的。 控制器可用于相对于另一辐射源延迟一个辐射源的激活。

公开(公告)号：US06821577B2

公开(公告)日：2004-11-23

申请号：US10234988

申请日：2002-09-04

Applicant: Kent Rossman

Inventor： Kent Rossman

IPC: H05H124

CPC classification number: C23C16/45523 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32302 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/3299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76837

Abstract: A method for depositing a conformal dielectric layer employing a dep-etch technique features selectively decreasing the deposition gas present in a process chamber where a substrate to be covered by the conformal dielectric layer is disposed. By selectively decreasing the deposition gas present in the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

Abstract translation: 使用去蚀刻技术沉积共形介电层的方法特征在于选择性地降低存在于处理室中的沉积气体，其中设置由保形介电层覆盖的衬底。 通过选择性地减少存在于处理室中的沉积气体，处理室中的形成等离子体的溅射气体的浓度增加。 沉积气体的流动优选地周期性地终止，以提供接近100％的溅射气体浓度。 以这种方式，可以大大增加具有足够的间隙填充特性的保形介电层的蚀刻速率，同时允许其沉积速率的增加。

公开(公告)号：US20180211818A1

公开(公告)日：2018-07-26

申请号：US15746154

申请日：2016-07-19

Applicant: Tokyo Electron Limited

Inventor： Shinji Kubota ,  Takashi Dokan ,  Koji Koyama ,  Naoki Matsumoto

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/32302 ,  H01J37/32311 ,  H01J2237/24564

Abstract: A plasma processing apparatus includes a processing vessel; a carrier wave group generating unit configured to generate a carrier wave group including multiple carrier waves having different frequencies belonging to a preset frequency band centered on a predetermined center frequency; a plasma generating unit configured to generate plasma by using the carrier wave group; a spectrum detecting unit configured to detect a progressive wave spectrum and a reflection wave spectrum of the carrier wave group; and a control unit configured to calculate, by using the progressive wave spectrum and the reflection wave spectrum, an absorption power which is a power of the carrier wave group absorbed into the plasma, and configured to adjust a parameter, which varies a minimum value of the reflection wave spectrum and a frequency corresponding to the minimum value, such that the absorption power becomes equal to or larger than a threshold value.

公开(公告)号：US09991097B2

公开(公告)日：2018-06-05

申请号：US15793856

申请日：2017-10-25

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tomohito Komatsu ,  Shigenori Ozaki ,  Yutaka Fujino ,  Jun Nakagomi

IPC: H01J37/32

CPC classification number: H01J37/32201 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/3244

Abstract: A plasma processing apparatus includes a chamber; a mounting table configured to mount thereon a target object in the chamber; a plasma source configured to introduce microwaves into the chamber through a ceiling wall of the chamber and generate a surface wave plasma in the chamber; a first gas introduction unit configured to introduce a first gas into the chamber from the ceiling wall; and a second gas introduction unit configured to introduce a second gas into the chamber from a predetermined height position between the ceiling wall and the mounting table. The second gas introduction unit has a plurality of nozzles extending from the ceiling wall toward the mounting table and arranged on a same circumference at a regular interval. Each of the nozzles discharges the second gas toward a nozzle adjacent thereto.

公开(公告)号：US20170084430A1

公开(公告)日：2017-03-23

申请号：US15370486

申请日：2016-12-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Naoyuki KOFUJI ,  Ken'etsu YOKOGAWA ,  Nobuyuki NEGISHI ,  Masami KAMIBAYASHI ,  Masatoshi MIYAKE

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/3341

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.