公开(公告)号：US20180233329A1

公开(公告)日：2018-08-16

申请号：US15951814

申请日：2018-04-12

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Naoyuki KOFUJI ,  Ken'etsu YOKOGAWA ,  Nobuyuki NEGISHI ,  Masami KAMIBAYASHI ,  Masatoshi MIYAKE

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/3341

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.

公开(公告)号：US20180047595A1

公开(公告)日：2018-02-15

申请号：US15558005

申请日：2016-04-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Naoyuki KOFUJI ,  Masahito MORI ,  Toshiaki NISHIDA ,  Ryoji HAMASAKI

IPC: H01L21/67 ,  H01L21/311 ,  H01J37/32 ,  H01L27/115

Abstract: Provided is a plasma processing apparatus capable of implementing both a radical irradiation step and an ion irradiation step using a single apparatus and controlling the ion irradiation energy from several tens eV to several KeV.The plasma processing apparatus includes a mechanism (125, 126, 131, 132) for generating inductively coupled plasma, a perforated plate 116 for partitioning the vacuum processing chamber into upper and lower areas 106-1 and 106-2 and shielding ions, and a switch 133 for changing over between the upper and lower areas 106-1 and 106-2 as a plasma generation area.

公开(公告)号：US20180122665A1

公开(公告)日：2018-05-03

申请号：US15718948

申请日：2017-09-28

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kazunori SHINODA ,  Tatehito USUI ,  Naoyuki KOFUJI ,  Yutaka KOUZUMA ,  Tomoyuki WATANABE ,  Kenetsu YOKOGAWA ,  Satoshi SAKAI ,  Masaru IZAWA

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67248 ,  H01J37/32 ,  H01J37/32449 ,  H01J37/32972 ,  H01J2237/2001 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67115

Abstract: A plasma processing apparatus includes a stage disposed in a processing chamber for mounting a wafer, a plasma generation chamber disposed above the processing chamber for plasma generation using process gas, a plate member having multiple introduction holes, made of a dielectric material, disposed above the stage and between the processing chamber and the plasma generation chamber, and a lamp disposed around the plate member for heating the wafer. The plasma processing apparatus further includes an external IR light source, an emission fiber arranged in the stage, that outputs IR light from the external IR light source toward a wafer bottom, and a light collection fiber for collecting IR light from the wafer. Data obtained using only IR light from the lamp is subtracted from data obtained also using IR light from the external IR light source during heating of the wafer. Thus, a wafer temperature is determined.

公开(公告)号：US20140116621A1

公开(公告)日：2014-05-01

申请号：US14033338

申请日：2013-09-20

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Masahito MORI ,  Naoyuki KOFUJI ,  Naoshi ITABASHI

IPC: H01J37/32

CPC classification number: H01J37/32798 ,  C23F4/00 ,  H01J37/32009 ,  H01J37/32183 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/32137 ,  H01L29/517

Abstract: The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within a processing chamber of the vacuum reactor and having a wafer 112 to be etched mounted on the upper surface thereof, bias supplying units 118 and 120 for supplying high frequency power for forming a bias potential to the lower electrode 113, a gas supply means 111 for feeding reactive gas into the processing chamber, an electric field supplying means 101 through 103 for supplying a magnetic field for generating plasma in the processing chamber, and a control unit 127 for controlling the distribution of ion energy in the plasma being incident on the wafer 112 via the high frequency power.

Abstract translation: 本发明提供一种用于蚀刻具有高精度步骤的多层膜结构的等离子体处理装置和干蚀刻方法。 等离子体处理装置包括真空反应器107，放置在真空反应器的处理室内的下部电极113，并且具有要在其上表面上安装的晶片112的偏压供给单元118和120，用于向 向下电极113形成偏置电位，用于将反应性气体供给到处理室中的气体供给装置111，用于在处理室中提供用于产生等离子体的磁场的电场供给装置101至103，以及控制单元127 用于控制通过高频功率入射在晶片112上的等离子体中的离子能量的分布。

公开(公告)号：US20190067032A1

公开(公告)日：2019-02-28

申请号：US15906862

申请日：2018-02-27

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Kazunori SHINODA ,  Naoyuki KOFUJI ,  Hiroyuki KOBAYASHI ,  Nobuya MIYOSHI ,  Kohei KAWAMURA ,  Masaru IZAWA ,  Kenji ISHIKAWA ,  Masaru HORI

IPC: H01L21/3213 ,  H01L27/115 ,  H01L21/67

CPC classification number: H01L21/32138 ,  H01J37/00 ,  H01L21/3065 ,  H01L21/32136 ,  H01L21/67017 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67115 ,  H01L27/115 ,  H01L27/11556

Abstract: In an etching method of etching a tungsten film, the method is provided to execute a generating a surface reaction layer on a tungsten film that is formed on a surface of a base material by supplying a reactive species including fluorine which is generated in plasma onto the base material for a first predetermined time in a state where the base material of which the tungsten film is formed on at least a portion of the surface is cooled to a melting point temperature or lower of a tungsten fluoride, and a removing the surface reaction layer that is generated on the tungsten film by heating the base material of which the surface reaction layer is generated on the tungsten film to a boiling point temperature or higher of the tungsten fluoride for a second predetermined time.

公开(公告)号：US20170084430A1

公开(公告)日：2017-03-23

申请号：US15370486

申请日：2016-12-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Naoyuki KOFUJI ,  Ken'etsu YOKOGAWA ,  Nobuyuki NEGISHI ,  Masami KAMIBAYASHI ,  Masatoshi MIYAKE

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32082 ,  H01J37/3211 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/3341

Abstract: In the plasma etching method, a sample is placed on a stage in a chamber. A first gas is introduced into the chamber. Electric field is supplied within the chamber to plasma is generated from the first gas. A first RF power of a first frequency, which is for generating a bias voltage in the sample for etching the sample with radicals which are generated in the plasma while the plasma is generated, is supplied to the stage. A second gas is introduced from a position in outer periphery of a surface of the stage, on which the sample is placed. A second RF power of a second frequency higher than the first frequency and capable of generating plasma from the second gas above the stage that allows radicals generated in the plasma generated from the second gas to be supplied in the outer periphery, is supplied to the stage.

公开(公告)号：US20160079055A1

公开(公告)日：2016-03-17

申请号：US14625898

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Naoyuki KOFUJI ,  Tadamitsu KANEKIYO ,  Kazunori SHINODA ,  Junichi TANAKA

IPC: H01L21/02 ,  B08B7/02 ,  B06B3/00

CPC classification number: H01L21/02068 ,  B06B3/00 ,  B08B7/028 ,  H01L21/02046

Abstract: A sample cleaning apparatus includes a vibrating unit which ultrasonically vibrates a sample while the sample is mounted and held on a sample stage arranged in a processing chamber, the vibrating unit including: a dielectric film which is arranged on the sample stage and above which the sample is mounted; electrodes which are arranged adjacent to each other in the dielectric film; and a radio frequency power supply which supplies radio frequency power at frequencies in a prescribed range to the electrodes while the sample is hold on the sample stage; and a gas supply unit which forms a gas flow in a direction along a surface of the sample, so that particles are expelled.

Abstract translation: 一种样品清洁装置，包括：振动单元，其在样本被安装并且保持在布置在处理室中的样品台上时超声振动样本，所述振动单元包括：电介质膜，其布置在所述样品台上方， 被安装 在电介质膜中相邻设置的电极; 以及射频电源，其在样本保持在所述样品台上的同时，将规定范围的频率的射频功率提供给所述电极; 以及气体供给单元，其在沿着样品表面的方向上形成气流，使得颗粒被排出。

公开(公告)号：US20210335625A1

公开(公告)日：2021-10-28

申请号：US16495652

申请日：2019-02-08

Applicant: Hitachi High-Technologies Corporation

Inventor： Naoyuki KOFUJI ,  Kenichi KUWAHARA

IPC: H01L21/311 ,  H01J37/32

Abstract: According to a dry etching method using plasma, when an organic film is etched, a first step of irradiating an organic film of a sample only with oxygen radicals while Ar ions are shielded, and a second step of irradiating the organic film with ions of a noble gas are alternately repeated, thereby an accurate etching process can be performed while a variation in etching of the organic film is suppressed. This makes it possible to suppress collapse of an LS pattern formed in a silicon substrate or the like.

公开(公告)号：US20190295827A1

公开(公告)日：2019-09-26

申请号：US16287679

申请日：2019-02-27

Applicant: Hitachi High-Technologies Corporation

Inventor： Takeshi OHMORI ,  Hyakka NAKADA ,  Naoyuki KOFUJI ,  Masayoshi ISHIKAWA ,  Masaru KURIHARA

IPC: H01J37/32 ,  G06N5/02 ,  G05B19/4155

Abstract: The efficiency of operation in a semiconductor processing apparatus is improved. In order to search an input parameter value to be set in a semiconductor processing apparatus for processing into a target processed shape, a predictive model indicating a relationship between an input parameter value and an output parameter value is generated based on the input parameter value and the output parameter value which is a measured value of a processing result processed by setting the input parameter value in the semiconductor processing apparatus. In this case, when the measured value of the processing result processed by the semiconductor processing apparatus is the defective data, the predictive model is generated based on the input parameter value causing defective data and defective substitute data obtained by substituting the measured value which is the defective data.

公开(公告)号：US20190295823A1

公开(公告)日：2019-09-26

申请号：US16286338

申请日：2019-02-26

Applicant: Hitachi High-Technologies Corporation

Inventor： Naoyuki KOFUJI ,  Kenetsu YOKOGAWA ,  Taku IWASE

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065

Abstract: A plasma processing apparatus includes a sample stage on which a sample is placed an inside of the processing chamber; a dielectric membrane forming an upper surface portion of the sample stage; a plurality of film-shaped electrodes which is disposed in the dielectric membrane, to which a DC power from a DC power supply is supplied and in which an electrostatic force for attracting the sample is formed; and a bias electrode (ESC base metal) disposed below the dielectric membrane and supplied with radio frequency power for forming a radio frequency bias potential from a radio frequency power supply during the processing of the sample. The plurality of electrodes includes a first electrode to which a positive polarity is imparted and a second electrode to which a negative polarity is imparted, wherein the first electrode and the second electrode are electrically connected to a corresponding positive electrode terminal and a corresponding negative electrode terminal of the DC power supply through the corresponding low pass filter circuits (LPF).