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    Preparation method of Ruthenium(Ru) powder for preparation of Ruthenium target
    5.
    发明申请
    Preparation method of Ruthenium(Ru) powder for preparation of Ruthenium target 审中-公开
    用于制备钌靶的钌（Ru）粉末的制备方法

    公开(公告)号：US20140123810A1

    公开(公告)日：2014-05-08

    申请号：US14115597

    申请日：2012-01-31

    申请人： Won Kyu Yoon ,  Seung Ho Yang ,  Gil Su Hong ,  Hong Sik Kim ,  Dong Han Kang

    发明人： Won Kyu Yoon ,  Seung Ho Yang ,  Gil Su Hong ,  Hong Sik Kim ,  Dong Han Kang

    IPC分类号： B22F9/16

    CPC分类号： B22F9/16 ,  B22F9/14 ,  B22F2009/001 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/0466 ,  Y02P10/24 ,  B22F1/0085 ,  B22F2201/013 ,  B22F1/0088 ,  B22F2201/03 ,  B22F9/04

    摘要： The present invention is related to a manufacturing method of high purity and refined Ru (Ruthenium) powder produced by using a waste Ru target. Yield of the target and physical properties of a thin film are improved by producing tremendously refined in which oxygen content of the target is decreased, and a crystal particle size is reduced.In order to obtain these merits, powder having a hollow inside is produced by applying plasma to a waste Ru target. Carbon impurities are selectively removed through a atmospheric heat process and Ru powder is oxidized. Thereby, Ru oxide (RuOx) powder is produced. High purity and refined Ru powder is acquired through a hydrogen atmospheric heat process after pulverizing the produced Ru oxide (RuOx) powder into refined shape.

    摘要翻译： 本发明涉及通过使用废Ru靶产生的高纯度和精制的Ru（钌）粉末的制造方法。 通过生产目标的氧含量降低，并且晶粒尺寸减小的极好的精炼来提高目标的产率和薄膜的物理性能。 为了获得这些优点，通过向废物Ru靶施加等离子体来制造具有中空的粉末。 通过大气热处理选择性去除碳杂质，并且Ru粉末被氧化。 由此，生成Ru氧化物（RuOx）粉末。 将生成的Ru氧化物（RuOx）粉末粉碎成精炼形状后，通过氢气大气热处理获得高纯度和精制的Ru粉末。

    TRANSFLECTIVE TYPE DIODE SUBSTRATE AND A METHOD FOR FABRICATION THE SAME
    9.
    发明申请
    TRANSFLECTIVE TYPE DIODE SUBSTRATE AND A METHOD FOR FABRICATION THE SAME 有权
    转移型二极体基板及其制造方法

    公开(公告)号：US20100279445A1

    公开(公告)日：2010-11-04

    申请号：US12836251

    申请日：2010-07-14

    申请人： Hyung Beom SHIN ,  Hong Sik Kim

    发明人： Hyung Beom SHIN ,  Hong Sik Kim

    IPC分类号： H01L21/28

    CPC分类号： G02F1/133555

    摘要： A transflective diode substrate for a liquid crystal display device, includes: a reflective zone including a diode having a scan electrode, an insulating pattern on the scan electrode and a pixel electrode over the scan electrode, organic patterns around the diode, and a reflection electrode over the organic patterns; and a transmissive zone adjacent to the reflective zone; wherein the pixel electrode is formed in the reflective zone and the transmissive zone.

    摘要翻译： 一种用于液晶显示装置的透反射二极管基板，包括：反射区，包括具有扫描电极的二极管，扫描电极上的绝缘图案和扫描电极上的像素电极，二极管周围的有机图案和反射电极 有机图案; 和与反射区相邻的透射区; 其中像素电极形成在反射区域和透射区域中。