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    Semiconductor memory device including a flash memory cell array and a mask read-only memory cell array
    1.
    发明申请
    Semiconductor memory device including a flash memory cell array and a mask read-only memory cell array 失效
    包括闪存单元阵列和掩模只读存储单元阵列的半导体存储器件

    公开(公告)号：US20050003614A1

    公开(公告)日：2005-01-06

    申请号：US10875720

    申请日：2004-06-25

    Applicant: Hong-kook Min ,  Yong-tae Kim

    Inventor： Hong-kook Min ,  Yong-tae Kim

    IPC: H01L27/112 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/105 ,  H01L29/76

    CPC classification number: H01L27/11521 ,  H01L27/105 ,  H01L27/112 ,  H01L27/1126 ,  H01L27/11293 ,  H01L27/11526

    Abstract: A semiconductor memory device included in a system-on-chip (SOC) or a microcomputer chip. The semiconductor memory device may include a flash memory cell array unit and a mask read-only memory (ROM) cell array unit which are formed in a single memory block without an isolation layer for separating the two units. Transistors included in the flash memory unit and the mask ROM unit are the same type and may have two threshold voltages. The transistor in each memory cell unit may be a split gate transistor, a metal-oxide-nitride-oxide-silicon, or silicon-oxide-nitride-oxide-silicon transistor. Further, the transistor included in the mask ROM unit in the semiconductor memory device may include enhancement transistors or depletion transistors in which a dopant ion-implanted region is formed at channel portions.

    Abstract translation: 包括在片上系统（SOC）或微计算机芯片中的半导体存储器件。 半导体存储器件可以包括闪存单元阵列单元和掩模只读存储器（ROM）单元阵列单元，其形成在没有用于分离两个单元的隔离层的单个存储器块中。 包括在闪存单元和掩模ROM单元中的晶体管是相同类型的并且可以具有两个阈值电压。 每个存储单元单元中的晶体管可以是分离栅极晶体管，金属氧化物 - 氮化物 - 氧化物 - 硅或氧化硅 - 氮化物 - 氧化物 - 硅晶体管。 此外，包括在半导体存储器件中的掩模ROM单元中的晶体管可以包括其中在沟道部分形成掺杂剂离子注入区的增强晶体管或耗尽型晶体管。

    Semiconductor memory device including a flash memory cell array and a mask read-only memory cell array
    2.
    发明授权
    Semiconductor memory device including a flash memory cell array and a mask read-only memory cell array 失效
    包括闪存单元阵列和掩模只读存储单元阵列的半导体存储器件

    公开(公告)号：US07230305B2

    公开(公告)日：2007-06-12

    申请号：US10875720

    申请日：2004-06-25

    Applicant: Hong-kook Min ,  Yong-tae Kim

    Inventor： Hong-kook Min ,  Yong-tae Kim

    IPC: H01L29/76

    CPC classification number: H01L27/11521 ,  H01L27/105 ,  H01L27/112 ,  H01L27/1126 ,  H01L27/11293 ,  H01L27/11526

    Abstract: A semiconductor memory device included in a system-on-chip (SOC) or a microcomputer chip. The semiconductor memory device may include a flash memory cell array unit and a mask read-only memory (ROM) cell array unit which are formed in a single memory block without an isolation layer for separating the two units. Transistors included in the flash memory unit and the mask ROM unit are the same type and may have two threshold voltages. The transistor in each memory cell unit may be a split gate transistor, a metal-oxide-nitride-oxide-silicon, or silicon-oxide-nitride-oxide-silicon transistor. Further, the transistor included in the mask ROM unit in the semiconductor memory device may include enhancement transistors or depletion transistors in which a dopant ion-implanted region is formed at channel portions.

    Abstract translation: 包括在片上系统（SOC）或微计算机芯片中的半导体存储器件。 半导体存储器件可以包括闪存单元阵列单元和掩模只读存储器（ROM）单元阵列单元，其形成在没有用于分离两个单元的隔离层的单个存储器块中。 包括在闪存单元和掩模ROM单元中的晶体管是相同类型的并且可以具有两个阈值电压。 每个存储单元单元中的晶体管可以是分离栅极晶体管，金属氧化物 - 氮化物 - 氧化物 - 硅或氧化硅 - 氮化物 - 氧化物 - 硅晶体管。 此外，包括在半导体存储器件中的掩模ROM单元中的晶体管可以包括其中在沟道部分形成掺杂剂离子注入区的增强晶体管或耗尽型晶体管。

    Method and apparatus for transmitting digital broadcasting stream using linking information about multi-view video stream, and method and apparatus for receiving the same
    4.
    发明授权
    Method and apparatus for transmitting digital broadcasting stream using linking information about multi-view video stream, and method and apparatus for receiving the same 有权
    使用关于多视点视频流的链接信息发送数字广播流的方法和装置，以及用于接收数字广播流的方法和装置

    公开(公告)号：US09055280B2

    公开(公告)日：2015-06-09

    申请号：US13016339

    申请日：2011-01-28

    Applicant: Yong-tae Kim ,  Jae-jun Lee ,  Yong-seok Jang ,  Kil-soo Jung ,  Hong-seok Park

    Inventor： Yong-tae Kim ,  Jae-jun Lee ,  Yong-seok Jang ,  Kil-soo Jung ,  Hong-seok Park

    IPC: H04N13/00 ,  H04N13/04

    CPC classification number: H04N13/161 ,  H04N13/139 ,  H04N13/194 ,  H04N13/356 ,  H04N19/46 ,  H04N19/597 ,  H04N19/70 ,  H04N2213/003

    Abstract: A digital broadcasting stream transmitting method and a digital broadcasting stream receiving method and apparatus for providing three-dimensional (3D) video services are provided. The transmitting method including: generating a plurality of elementary streams (ESs) for a plurality of pieces of video information including at least one of information about a base-view video of a 3D video, information about an additional-view video corresponding to the base-view video, and a two-dimensional (2D) video having a different view from views of the 3D video; multiplexing the plurality of ESs with link information for identifying at least one piece of video information linked with the plurality of pieces of video information, to generate at least one transport stream (TS); and transmitting the generated at least one TS via at least one channel.

    Abstract translation: 提供了一种用于提供三维（3D）视频服务的数字广播流发送方法和数字广播流接收方法和装置。 所述发送方法包括：为多条视频信息生成多个基本流（ES），所述多个视频信息包括关于3D视频的基本视点的信息中的至少一个，关于与所述基础相关的附加视频视频的信息 视频视频和具有与3D视频的视图不同的视图的二维（2D）视频; 将多个ES复用到用于识别与多条视频信息链接的至少一条视频信息的链接信息，以产生至少一个传输流（TS）; 以及经由至少一个信道发送所生成的至少一个TS。

    Method and apparatus for displaying two-dimensional or three-dimensional image sequence while adjusting frame rate
    5.
    发明授权
    Method and apparatus for displaying two-dimensional or three-dimensional image sequence while adjusting frame rate 有权
    在调整帧速率的同时显示二维或三维图像序列的方法和装置

    公开(公告)号：US08570362B2

    公开(公告)日：2013-10-29

    申请号：US12541372

    申请日：2009-08-14

    Applicant: Sang-moo Park ,  Yong-tae Kim ,  Seon-deok Hwang ,  Dae-sik Kim

    Inventor： Sang-moo Park ,  Yong-tae Kim ,  Seon-deok Hwang ,  Dae-sik Kim

    IPC: H04N15/00 ,  H04N13/04

    CPC classification number: G06T15/00 ,  H04N13/139 ,  H04N13/359 ,  H04N2213/007

    Abstract: Provided are a method and apparatus for displaying a two-dimensional (2D)/three-dimensional (3D) image, and apparatus to execute the same, the method including determining whether an input image sequence having a first frame rate is a 2D image sequence or a 3D image sequence, wherein, if the input image sequence is a 2D image sequence, generating a 2D output image sequence having a second frame rate, the 2D output image sequence including the input image sequence and a 2D intermediate image generated from the input image sequence, and wherein, if the input image sequence is a 3D image sequence, generating a 3D output image sequence having a third frame rate, where a left-viewpoint intermediate image, a right-viewpoint intermediate image and the input image sequence are repeatedly included in the 3D output image sequence, the left-viewpoint intermediate image is determined from at least one left-viewpoint image in a left-viewpoint image sequence included in the input image sequence, and the right-viewpoint intermediate image is determined from at least one right-viewpoint image in a right-viewpoint image sequence included in the input image sequence.

    Abstract translation: 提供了一种用于显示二维（2D）/三维（3D）图像的方法和装置及其执行方法，所述方法包括确定具有第一帧速率的输入图像序列是否为2D图像序列 或3D图像序列，其中如果所述输入图像序列是2D图像序列，则生成具有第二帧率的2D输出图像序列，所述2D输出图像序列包括所述输入图像序列和从所述输入生成的2D中间图像 图像序列，并且其中，如果所述输入图像序列是3D图像序列，则生成具有第三帧率的3D输出图像序列，其中左视点中间图像，右视点中间图像和所述输入图像序列重复 包括在3D输出图像序列中，从包括在输入图像序列中的左视点图像序列中的至少一个左视点图像确定左视点中间图像，以及 从包括在输入图像序列中的右视点图像序列中的至少一个右视点图像确定右视点中间图像。

    Optical network terminal of the gigabit passive optical network and frame treatment method of the ONT
    7.
    发明授权
    Optical network terminal of the gigabit passive optical network and frame treatment method of the ONT 有权
    千兆无源光网络的光网络终端和ONT的帧处理方法

    公开(公告)号：US08526818B2

    公开(公告)日：2013-09-03

    申请号：US12747330

    申请日：2009-04-28

    Applicant: Kwang-ok Kim ,  Yong-tae Kim ,  Dong-soo Lee

    Inventor： Kwang-ok Kim ,  Yong-tae Kim ,  Dong-soo Lee

    IPC: H04B14/00

    CPC classification number: H04J3/1694 ,  H04Q11/0067 ,  H04Q2011/0064

    Abstract: A gigabit passive optical network (GPON) system for fiber to the home (FTTH) service must provide a down-stream data rate of an optical band to provide IPTV service with hundreds of channels to subscribers, and must be able to provide an upstream data rate of an optical band using a currently available BM-IC chip. A currently available BM-IC chip for a GPON has 1.244 Gbps and 2.488 Gbps modes. Accordingly, an optical network terminal (ONT) for a GPON that is capable of providing a downstream transmission band of 10-Gbps and an upstream transmission band of 1.244 Gbps or 2.488 Gbps, and a method for processing an upstream frame in the terminal, are provided. The GPON ONT can provide 20 Mbps, high-definition IPTV service with 500 channels and can provide both upstream data rates of 1.244 Gbps and 2.488 Gbps according to a user's selection without using an additional device.

    Abstract translation: 用于光纤到家庭（FTTH）业务的千兆无源光网络（GPON）系统必须提供光带的下行数据速率，以向用户提供数百个信道的IPTV服务，并且必须能够提供上行数据 使用当前可用的BM-IC芯片的光学带宽率。 目前用于GPON的BM-IC芯片具有1.244 Gbps和2.488 Gbps模式。 因此，能够提供10Gbps的下行传输频带和1.244Gbps或2.488Gbps的上行传输频带的GPON的光网络终端（ONT）以及用于处理终端中的上行帧的方法是 提供。 GPON ONT可以提供具有500个通道的20 Mbps高清晰度IPTV服务，并可根据用户的选择提供1.244 Gbps和2.488 Gbps的上行数据速率，而无需使用其他设备。

    APPARATUS AND METHOD FOR EFFICIENT BANDWIDTH ALLOCATION ON TIME DIVISION MULTIPLE ACCESS-BASED PASSIVE OPTICAL NETWORK (TDMA-PON)
    9.
    发明申请
    APPARATUS AND METHOD FOR EFFICIENT BANDWIDTH ALLOCATION ON TIME DIVISION MULTIPLE ACCESS-BASED PASSIVE OPTICAL NETWORK (TDMA-PON) 有权
    基于时分多路访问的被动光网络（TDMA-PON）的有效带宽分配的装置和方法

    公开(公告)号：US20100221006A1

    公开(公告)日：2010-09-02

    申请号：US12597850

    申请日：2008-08-19

    Applicant: Bin-yeong Yoon ,  Man-soo Han ,  Sung-chang Kim ,  Hark Yoo ,  Dong-soo Lee ,  Jong-deog Kim ,  Kyeong-hwan Doo ,  Yong-tae Kim ,  Kwang-ok Kim ,  Bong-kyu Kim ,  Geun-yong Kim ,  Sung-hoon Kwak ,  Mun-seob Lee ,  Le Quan

    Inventor： Bin-yeong Yoon ,  Man-soo Han ,  Sung-chang Kim ,  Hark Yoo ,  Dong-soo Lee ,  Jong-deog Kim ,  Kyeong-hwan Doo ,  Yong-tae Kim ,  Kwang-ok Kim ,  Bong-kyu Kim ,  Geun-yong Kim ,  Sung-hoon Kwak ,  Mun-seob Lee ,  Le Quan

    IPC: H04J14/08

    CPC classification number: H04J3/1694 ,  H04J2203/0067 ,  H04Q11/0067 ,  H04Q2011/0064

    Abstract: Provided are an apparatus and method for efficiently and dynamically allocating a bandwidth on a Time Division Multiple Access-based Passive Optical Network (TDMA PON). The dynamic bandwidth allocation apparatus for uplink data transmission of a plurality of Optical Network Units (ONUs) including a plurality of class queues corresponding to Transmission Container (T-CONT) types, the plurality of ONUs connected to an Optical Line Terminal (OLT) on a Passive Optical Network (PON), includes: a class queue information storage unit storing information regarding a bandwidth allocation period and an allocatable bandwidth amount for each T-CONT type; an allocation check table unit checking the bandwidth allocation period for the T-CONT type received from the class queue information storage unit, and determining an allocatable bandwidth amount for the T-CONT type; and a bandwidth allocation unit allocating an uplink bandwidth to the T-CONT type with reference to the bandwidth allocation period and the allocatable bandwidth amount for the T-CONT type, and re-allocating to each ONU an uplink bandwidth remaining after allocating a total uplink bandwidths to all T-CONT types.

    Abstract translation: 提供了一种用于在基于时分多址接入的无源光网络（TDMA PON）上有效且动态地分配带宽的装置和方法。 用于包括对应于传输容器（T-CONT）类型的多个类队列的多个光网络单元（ONU）的上行链路数据传输的动态带宽分配装置，连接到光线路终端（OLT）上的多个ONU 无源光网络（PON）包括：类队列信息存储单元，存储关于每个T-CONT类型的带宽分配周期和可分配带宽量的信息; 分配检查表单元，检查从类队列信息存储单元接收到的T-CONT类型的带宽分配周期，以及确定T-CONT类型的可分配带宽量; 以及带宽分配单元，参照带宽分配期间和T-CONT类型的可分配带宽量向T-CONT类型分配上行链路带宽，并且在分配总上行链路之后向每个ONU重新分配剩余的上行链路带宽 所有T-CONT类型的带宽。

    Non-volatile memory device and method of driving the same
    10.
    发明申请
    Non-volatile memory device and method of driving the same 审中-公开
    非易失性存储器件及其驱动方法

    公开(公告)号：US20100103744A1

    公开(公告)日：2010-04-29

    申请号：US12588680

    申请日：2009-10-23

    Applicant: Seung-jin Yang ,  Jeong-uk Han ,  Yong-tae Kim ,  Yong-suk Choi ,  Bae-seong Kwon

    Inventor： Seung-jin Yang ,  Jeong-uk Han ,  Yong-tae Kim ,  Yong-suk Choi ,  Bae-seong Kwon

    IPC: G11C16/04 ,  G11C11/34

    CPC classification number: G11C16/0433

    Abstract: A non-volatile memory device includes a memory cell array with a plurality of unit memory cells arranged in a matrix pattern, each of the unit memory cells having first and second non-volatile memory transistors sharing a common source, and a selection transistor connected between the common source and one of the first and second non-volatile memory transistors, a first word line coupled to control gates of the first non-volatile memory transistors arranged in a column direction of the memory cell array, a second word line coupled to control gates of the second non-volatile memory transistors arranged in the column direction of the memory cell array, a selection line coupled to gates of the selected transistors arranged in the column direction of the memory cell array, and at least one bit line coupled to drains of the first and second non-volatile memory transistors.

    Abstract translation: 一种非易失性存储器件包括具有以矩阵模式布置的多个单元存储单元的存储单元阵列，每个单元存储单元具有共享公共源的第一和第二非易失性存储器晶体管，以及连接在 公共源和第一和第二非易失性存储器晶体管中的一个，耦合到以存储单元阵列的列方向布置的第一非易失性存储器晶体管的控制栅极的第一字线，耦合到控制的第二字线 布置在存储单元阵列的列方向上的第二非易失性存储晶体管的栅极，耦合到沿着存储单元阵列的列方向布置的所选晶体管的栅极的选择线以及耦合到漏极的至少一个位线 的第一和第二非易失性存储器晶体管。

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