公开(公告)号：US20220406679A1

公开(公告)日：2022-12-22

申请号：US17888625

申请日：2022-08-16

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Ruoyang Du ,  Zhen Lv ,  Chaoyang Guo ,  Wei Wu ,  Bingzhi Wu

IPC: H01L23/373 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00 ,  H01L21/48 ,  H01L23/00

Abstract: A method for producing a power semiconductor system includes packaging a power device in plastic to form a power semiconductor component, forming a first heat dissipation face on a surface of the power semiconductor component; heating a first material between a first heat sink and the first heat dissipation face; and cooling the first material on the first heat dissipation face to connect the power semiconductor component and the first heat sink.

公开(公告)号：US20250070055A1

公开(公告)日：2025-02-27

申请号：US18942743

申请日：2024-11-10

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Fengqun Lang ,  Hui Li ,  Sizhan Zhou ,  Haiyan Liu ,  Huibin Chen ,  Zhen Lv ,  Chunfu HU

IPC: H01L23/58 ,  B60L53/51 ,  H01L23/367 ,  H01L31/02

Abstract: A power module includes a first metal layer-coated substrate, a plurality of chips, and a first connection piece. A first electrode of each chip is electrically connected to a first metal layer of the first metal layer-coated substrate. The first connection piece includes a first main body part and a plurality of first contact parts. A second electrode of each of the plurality of chips is in contact with at least one of the first contact parts. A part of the first main body part is between at least one pair of adjacent first contact parts. A current flowing out from the chip directly flows to the first main body part through the first contact part. The chips are connected in parallel by using the first connection piece.

公开(公告)号：US20240312895A1

公开(公告)日：2024-09-19

申请号：US18672681

申请日：2024-05-23

Applicant: Huawei Digital Power Technologies Co., Ltd.

Inventor： Huibin Chen ,  Yutao Wang ,  Haiyan Liu ,  Song Chen ,  Zhonghua Yin ,  Zhen Lv ,  Zhaoyue Wang ,  Qiliang Yang

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/373

CPC classification number: H01L23/49838 ,  H01L23/3735 ,  H01L23/49811 ,  H01L24/26 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181

Abstract: A power module is provided that may include a first metal-clad substrate, a chip located on a side of the first metal-clad substrate, and first solder located between the first metal-clad substrate and the chip. A first metal layer is disposed on a surface that is of the first metal-clad substrate and that faces the chip, and the first metal layer includes a groove and a blocking part. A first thickness of the first metal layer is less than a second thickness. The first thickness is a thickness of at least a part of an area in the blocking part, and the second thickness is a thickness of the first metal layer in an area other than the groove and the blocking part. The blocking part is located between the chip and the adjacent groove, and is configured to prevent the first solder from overflowing into the groove.