公开(公告)号：US3558374A

公开(公告)日：1971-01-26

申请号：US3558374D

申请日：1968-01-15

Applicant: IBM

Inventor： BOSS DAVID W ,  DOO VEN Y ,  PATTERSON WILLIAM N

IPC: C23C16/44 ,  C23C16/00 ,  C30B25/02 ,  C30B29/06 ,  C30B31/06 ,  H01L21/00 ,  H01L21/205 ,  H01L21/22 ,  H01L21/331 ,  H01L21/763 ,  H01L21/86 ,  H01L27/00 ,  H01L29/04 ,  H01L29/73 ,  H01L29/78 ,  H01L7/36

CPC classification number: H01L29/04 ,  C23C16/00 ,  H01L21/00 ,  H01L27/00 ,  Y10S148/085 ,  Y10S148/122 ,  Y10S148/15

Abstract: A FILM OF A POLYCRYSTALLINE MATERIAL IS DEPOSITED PYROLYTICALLY ON AN ELECTRICALLY INSULATING SURFACE OF A SUBSTRATE. BY CONTROLLING THE RATE OF DEPOSITION OF THE MATERIAL ON THE SUBSTRATE AND THE TEMPERATURE OF THE SUBSTRATE, THE GRAIN SIZE OF THE POLYCRYSTALLINE FILM IS REGULATED SO THAT PN JUNCTIONS HAVING A SHARP REVERSE BIASED BREAKDOWN MAY BE FORMED THEREIN.