公开(公告)号：US3669769A

公开(公告)日：1972-06-13

申请号：US3669769D

申请日：1970-09-29

Applicant: IBM

Inventor： BADAMI ANGELO V ,  EBERT EKKEHARD ,  KEMLAGE BERNARD M ,  KROELL KARL E ,  POGGE H BERNHARD

IPC: C30B25/02 ,  H01L21/205 ,  H01L21/22 ,  H01L7/36 ,  C23C13/00

CPC classification number: C30B29/06 ,  C30B25/02 ,  C30B29/08 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/2205 ,  Y10S148/007 ,  Y10S148/037 ,  Y10S148/145 ,  Y10S438/916

Abstract: AUTODOPING IS MINIMIZED DURING THE GROWTH OF AN EPITAXIAL LAYER OF A SEMICONDUCTOR SUBSTRATE BY USING A GASEOUS REACTION MIXTURE THAT DEPOSITS THE INITIAL CAPPING LAYER AT A RELATIVELY SLOW DEPOSITION RATE. THE REACTION MIXTURE CONTAINS A RELATIVELY MINOR PORTION OF A SEMICONDUCTOR COMPOUND ALONG WITH THE CARRIER GAS. SUBSEQUENTLY, A SECOND GASEOUS REACTION MIXTURE CONTAINING A GREATER PORTION OF A COMPOUND OF A SEMICONDUCTOR MATERIAL IS USED TO COMPLETE THE DEPOSITION OF THE EPITXIAL LAYER. THIS IS DONE MERELY TO REDUCE THE TOTAL GROWTH CYCLE.

公开(公告)号：US3698947A

公开(公告)日：1972-10-17

申请号：US3698947D

申请日：1970-11-02

Applicant: IBM

Inventor： KEMLAGE BERNARD M ,  POGGE HANS B

IPC: H01L21/00 ,  H01L21/20 ,  B44D1/18

CPC classification number: H01L21/02381 ,  H01L21/00 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02664 ,  Y10S148/043 ,  Y10S148/051 ,  Y10S148/061 ,  Y10S148/065 ,  Y10S148/071 ,  Y10S148/085 ,  Y10S148/122 ,  Y10S438/969

Abstract: A METHOD WHEREIN AN AMORPHOUS MATERIAL IS INITIALLY DEPOSITED ON A MONOCRYSTALLINE SUBSTRATE AND WHEREIN SUBSEQUENTLY SELECTED PORTIONS OF THE AMORPHOUS LAYER ARE REMOVED TO EXPOSE PORTIONS OF THE SURFACE OF THE MONOCRYSTALLINE SUBSTRATE. A THIN LAYER OF A POLYCRYSTALLINE SEMICONDUCTOR MATERIAL IS DEPOSITED OVER THE WHOLE WAFER. THE REMAINING PORTIONS OF THE AMROPHOUS LAYER ARE REMOVED INCLUDING THE OVERLYING POLYCRYSTALLINE MATERIAL. A LAYER OF SEMICONDUCTOR MATERIAL IS DEPOSITED ON THE SUBSTRATE UNDER EPITAXIAL GROWTH CONDITIONS WHICH WILL FORM POLYCRYSTALLINE MATERIAL OVER THE REMAINING POLYCRYSTALLINE REGIONS AND EPITAXIAL MATERIAL OVER THE EXPOSED MONOCRYSTALLINE REGIONS OF THE SUBSTRATE.