公开(公告)号：US3706612A

公开(公告)日：1972-12-19

申请号：US3706612D

申请日：1968-07-16

Applicant: IBM

Inventor： PALMER MYRON D

IPC: C04B41/91 ,  C01B21/068 ,  C01B33/12 ,  H01L21/308 ,  H01L21/311 ,  H01L7/50

CPC classification number: H01L21/31111

Abstract: A PROCESS FOR ETCHING SILICON NITRIDE WHICH COMPRISES CONTACTING A SILICON NITRIDE SUBSTRATE WITH FUSED AMMONIUM HYDROGE PHOSPHATE AT A TEMPERATURE IN THE RANGE OF ABOUT 190*C. TO 235*C. THE PREFERRED MOLE RATIO OF NH4 TO PO4 IS 0.8 TO 1.5. THE PROCESS FINDS PARTICULAR APPLICABILITY IN ETCHING A SILICON NITRIDE SUBSTRATE WHICH HAS BEEN MASKED WITH A PHOTO-RESIST.

公开(公告)号：US3518084A

公开(公告)日：1970-06-30

申请号：US3518084D

申请日：1967-01-09

Applicant: IBM

Inventor： BARSON FRED ,  KUEHN RICHARD T ,  PALMER MYRON D

IPC: H01L21/00 ,  H01L21/033 ,  H01L23/29 ,  H01L23/485 ,  G03C5/00 ,  G03C5/06

CPC classification number: H01L23/291 ,  H01L21/00 ,  H01L21/033 ,  H01L23/29 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00