公开(公告)号：US11599138B2

公开(公告)日：2023-03-07

申请号：US16593917

申请日：2019-10-04

Applicant: IMEC vzw ,  Katholieke Universiteit Leuven

Inventor： Hanns Christoph Adelmann ,  Jose Diogo Costa ,  Florin Ciubotaru

IPC: G06N3/08 ,  G06E1/04 ,  G06N3/084

Abstract: An arrangement for use in a matrix-vector-multiplier, comprising a stack of material layers arranged on a substrate, and a waveguide element formed in at least one material layer in the stack is disclosed. In one aspect, the arrangement further comprises a transducer arrangement which is coupled to the waveguide element. The transducer arrangement is configured to generate and detect spin wave(s) in the waveguide element, and wherein the waveguide element is configured to confine and to provide interference of the at spin wave(s) propagating therein. The arrangement further comprises a control mechanism comprising at least one control element coupled to the waveguide element, and a direct current electric source coupled to the at least one control element. The control mechanism, via the at least one control element, is configured to modify the phase velocity of the spin wave(s) propagating in the waveguide element.

公开(公告)号：US20230165159A1

公开(公告)日：2023-05-25

申请号：US18058010

申请日：2022-11-22

Applicant: IMEC VZW

Inventor： Jose Diogo Costa ,  Sebastien Couet ,  Geoffrey Pourtois ,  Benoit Van Troeye

IPC: H10N50/10 ,  G11C11/16 ,  H10N50/80

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/02

Abstract: The disclosure relates to spin orbit torque (SOT) magnetic random access (MRAM) devices. A magnetic structure for a SOT-MRAM device and a method for fabricating the magnetic structure are presented. The magnetic structure comprises a SOT layer and a magnetic tunnel junction (MTJ) structure arranged on the SOT layer. The SOT layer comprises a material combination of a bismuth-based material and a metal having a melting point of at least 1000° C. As a result, the SOT is thermally stable and also shows a large spin Hall angle (SHA).

公开(公告)号：US20230145983A1

公开(公告)日：2023-05-11

申请号：US18051719

申请日：2022-11-01

Applicant: IMEC vzw

Inventor： Sebastien Couet ,  Van Dai Nguyen ,  Gouri Sankar Kar ,  Siddharth Rao ,  Jose Diogo Costa

IPC: G11C11/16 ,  H10N50/10 ,  H10B61/00

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H10N50/10 ,  H10B61/00

Abstract: The disclosed technology relates to a magnetic domain wall-based memory device including a combination of at least one magnetic domain wall track and at least one spin orbit torque (SOT) track, which are arranged in a crossing architecture. The SOT track can include a first strip of a patterned SOT generating layer, wherein the first strip extends into a first direction and is configured to pass a first current along the first direction. The magnetic domain wall track can include a second strip of the patterned SOT generating layer and a first magnetic strip of a patterned magnetic free layer, wherein the second strip extends along a second direction and intersects with the first strip in a first crossing region. The first magnetic strip can be provided on the second strip including the first crossing region and can be configured to pass a second current along the second direction. Further, a first and a second MTJ structure can be provided on the first magnetic strip and can be separated in the second direction. The first MTJ structure can be provided above the first crossing region and can be provided with a first voltage gate.