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    MAGNETIC DOMAIN WALL-BASED MEMORY DEVICE WITH TRACK-CROSSING ARCHITECTURE
    1.
    发明公开
    MAGNETIC DOMAIN WALL-BASED MEMORY DEVICE WITH TRACK-CROSSING ARCHITECTURE 审中-公开

    公开(公告)号：US20230145983A1

    公开(公告)日：2023-05-11

    申请号：US18051719

    申请日：2022-11-01

    申请人： IMEC vzw

    发明人： Sebastien Couet ,  Van Dai Nguyen ,  Gouri Sankar Kar ,  Siddharth Rao ,  Jose Diogo Costa

    IPC分类号： G11C11/16 ,  H10N50/10 ,  H10B61/00

    CPC分类号： G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H10N50/10 ,  H10B61/00

    摘要： The disclosed technology relates to a magnetic domain wall-based memory device including a combination of at least one magnetic domain wall track and at least one spin orbit torque (SOT) track, which are arranged in a crossing architecture. The SOT track can include a first strip of a patterned SOT generating layer, wherein the first strip extends into a first direction and is configured to pass a first current along the first direction. The magnetic domain wall track can include a second strip of the patterned SOT generating layer and a first magnetic strip of a patterned magnetic free layer, wherein the second strip extends along a second direction and intersects with the first strip in a first crossing region. The first magnetic strip can be provided on the second strip including the first crossing region and can be configured to pass a second current along the second direction. Further, a first and a second MTJ structure can be provided on the first magnetic strip and can be separated in the second direction. The first MTJ structure can be provided above the first crossing region and can be provided with a first voltage gate.

    Spintronic device with synthetic antiferromagnet hybrid storage layer
    2.
    发明授权
    Spintronic device with synthetic antiferromagnet hybrid storage layer 有权

    公开(公告)号：US12096700B2

    公开(公告)日：2024-09-17

    申请号：US16909718

    申请日：2020-06-23

    申请人： IMEC vzw

    发明人： Sebastien Couet ,  Van Dai Nguyen

    IPC分类号： H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

    CPC分类号： H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00

    摘要： The disclosed technology relates generally to magnetic devices, and more particularly to magnetic memory and/or logic devices. In an aspect, a spintronic device comprises a tunnel barrier, a storage layer provided on the tunnel barrier, and a seed layer provided on the storage layer. The storage layer includes a first magnetic layer having a first crystallographic orientation provided on the tunnel barrier, a spacer layer provided on the first magnetic layer, a second magnetic layer having a second crystallographic orientation provided on the spacer layer and exchange coupled to the first magnetic layer, an antiferromagnetic coupling layer provided on the second magnetic layer, and a third magnetic layer having the second crystallographic orientation provided on the antiferromagnetic coupling layer and antiferromagnetically coupled to the second magnetic layer.