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公开(公告)号：US20180190902A1
公开(公告)日：2018-07-05
申请号：US15857168
申请日：2017-12-28
Applicant: IMEC VZW
Inventor： Kevin Garello , Siddharth Rao
CPC classification number: H01L43/12 , G11C11/161 , H01L27/226 , H01L43/02 , H01L43/08
Abstract: The disclosed technology generally relates to magnetic devices, and more particularly to magnetic tunnel junction (MTJ) devices, and methods of forming the MTJ devices. In one aspect, a method of forming a magnetic tunnel junction (MTJ) device comprises providing a stack of layers comprising, in a top-down direction, a first magnetic layer having a fixed magnetization direction, a barrier layer, and a second magnetic layer having a switchable magnetization direction with respect to the fixed magnetization direction of the first magnetic layer. The method additionally comprises etching the stack of layers to form a pillar comprising at least the first magnetic layer. The method additionally comprises forming at least one trench in the second magnetic layer adjacent the pillar. The method further comprises processing at least one region of the second magnetic layer peripheral to the at least one trench with respect to the pillar, such that the at least one region obtains an in-plane magnetic anisotropy.
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公开(公告)号：US20210126190A1
公开(公告)日：2021-04-29
申请号：US17079264
申请日：2020-10-23
Applicant: IMEC vzw
Inventor： Sebastien Couet , Siddharth Rao , Robert Carpenter
Abstract: The disclosed technology relates generally to a magnetic device and more particularly to a spintronic device comprising a tunnel barrier, a hybrid storage layer on the tunnel barrier and a metal layer on the hybrid storage layer. The hybrid storage layer comprises a first magnetic layer, a spacer layer on the first magnetic layer and at least one further magnetic layer on the spacer layer and exchange coupled to the first magnetic layer via the spacer layer.
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公开(公告)号：US11737371B2
公开(公告)日：2023-08-22
申请号：US17079264
申请日：2020-10-23
Applicant: IMEC vzw
Inventor： Sebastien Couet , Siddharth Rao , Robert Carpenter
Abstract: The disclosed technology relates generally to a magnetic device and more particularly to a spintronic device comprising a tunnel barrier, a hybrid storage layer on the tunnel barrier and a metal layer on the hybrid storage layer. The hybrid storage layer comprises a first magnetic layer, a spacer layer on the first magnetic layer and at least one further magnetic layer on the spacer layer and exchange coupled to the first magnetic layer via the spacer layer.
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公开(公告)号：US20230145983A1
公开(公告)日：2023-05-11
申请号：US18051719
申请日：2022-11-01
Applicant: IMEC vzw
Inventor： Sebastien Couet , Van Dai Nguyen , Gouri Sankar Kar , Siddharth Rao , Jose Diogo Costa
CPC classification number: G11C11/161 , G11C11/1673 , G11C11/1675 , H10N50/10 , H10B61/00
Abstract: The disclosed technology relates to a magnetic domain wall-based memory device including a combination of at least one magnetic domain wall track and at least one spin orbit torque (SOT) track, which are arranged in a crossing architecture. The SOT track can include a first strip of a patterned SOT generating layer, wherein the first strip extends into a first direction and is configured to pass a first current along the first direction. The magnetic domain wall track can include a second strip of the patterned SOT generating layer and a first magnetic strip of a patterned magnetic free layer, wherein the second strip extends along a second direction and intersects with the first strip in a first crossing region. The first magnetic strip can be provided on the second strip including the first crossing region and can be configured to pass a second current along the second direction. Further, a first and a second MTJ structure can be provided on the first magnetic strip and can be separated in the second direction. The first MTJ structure can be provided above the first crossing region and can be provided with a first voltage gate.
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