公开(公告)号：US08742600B2

公开(公告)日：2014-06-03

申请号：US13736088

申请日：2013-01-08

Applicant: Industrial Technology Research Institute

Inventor： Jing-Yao Chang ,  Tao-Chih Chang ,  Tung-Han Chuang ,  Chun-Yen Lee

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L23/49811 ,  H01L21/76885 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29005 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/83065 ,  H01L2224/8309 ,  H01L2224/83091 ,  H01L2224/83097 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/00 ,  H01L2924/206 ,  H01L2924/00014

Abstract: Provided are a dual-phase intermetallic interconnection structure and a fabricating method thereof. The dual-phase intermetallic interconnection structure includes a first intermetallic compound, a second intermetallic compound, a first solder layer, and a second solder layer. The second intermetallic compound covers and surrounds the first intermetallic compound. The first intermetallic compound and the second intermetallic compound contain different high-melting point metal. The first solder layer and the second solder layer are disposed at the opposite sides of the second intermetallic compound, respectively. The first intermetallic compound is adapted to fill the micropore defects generated during the formation of the second intermetallic compound.

Abstract translation: 提供了一种双相金属间互连结构及其制造方法。 双相金属间互连结构包括第一金属间化合物，第二金属间化合物，第一焊料层和第二焊料层。 第二金属间化合物覆盖并围绕第一金属间化合物。 第一金属间化合物和第二金属间化合物含有不同的高熔点金属。 第一焊料层和第二焊料层分别设置在第二金属间化合物的相对侧。 第一金属间化合物适于填充在形成第二金属间化合物期间产生的微孔缺陷。

公开(公告)号：US20140097534A1

公开(公告)日：2014-04-10

申请号：US13736088

申请日：2013-01-08

Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor： Jing-Yao Chang ,  Tao-Chih Chang ,  Tung-Han Chuang ,  Chun-Yen Lee

IPC: H01L23/498 ,  H01L21/768

CPC classification number: H01L23/49811 ,  H01L21/76885 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29005 ,  H01L2224/29082 ,  H01L2224/29083 ,  H01L2224/29084 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/32503 ,  H01L2224/83065 ,  H01L2224/8309 ,  H01L2224/83091 ,  H01L2224/83097 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/00 ,  H01L2924/206 ,  H01L2924/00014

Abstract: Provided are a dual-phase intermetallic interconnection structure and a fabricating method thereof. The dual-phase intermetallic interconnection structure includes a first intermetallic compound, a second intermetallic compound, a first solder layer, and a second solder layer. The second intermetallic compound covers and surrounds the first intermetallic compound. The first intermetallic compound and the second intermetallic compound contain different high-melting point metal. The first solder layer and the second solder layer are disposed at the opposite sides of the second intermetallic compound, respectively. The first intermetallic compound is adapted to fill the micropore defects generated during the formation of the second intermetallic compound.

Abstract translation: 提供了一种双相金属间互连结构及其制造方法。 双相金属间互连结构包括第一金属间化合物，第二金属间化合物，第一焊料层和第二焊料层。 第二金属间化合物覆盖并围绕第一金属间化合物。 第一金属间化合物和第二金属间化合物含有不同的高熔点金属。 第一焊料层和第二焊料层分别设置在第二金属间化合物的相对侧。 第一金属间化合物适于填充在形成第二金属间化合物期间产生的微孔缺陷。