公开(公告)号：US09318694B2

公开(公告)日：2016-04-19

申请号：US14140758

申请日：2013-12-26

Applicant: INTEL CORPORATION

Inventor： Daniel Lamborn ,  Oleg Golonzka ,  Christopher Wiegand

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Methods of forming a memory device structure are described. Those methods may include forming a non-conductive spacer material on a top electrode of a magnetic tunnel junction structure, and then forming a highly selective material on the non-conductive spacer material of the magnetic tunnel junction prior to etching a bottom electrode of the magnetic tunnel junction.

Abstract translation: 描述形成存储器件结构的方法。 这些方法可以包括在磁性隧道结结构的顶部电极上形成非导电间隔物材料，然后在蚀刻磁性体的底部电极之前在磁性隧道结的非导电间隔物材料上形成高选择性材料 隧道交界处。